Visible light emission from GaAs nanocrystals in films fabricated by sequential ion implantation

Physical Review B - Condensed Matter and Materials Physics

Volumn 62, Issue 8, 2000, Pages 5100-5108

  Kanemitsu, Yoshihiko ^a   Tanaka, Hiroshi ^a   Fukunishi, Yunosuke ^a   Kushida, Takashi ^a   Min, Kyu Sung ^b   Atwater, Harry A ^b  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b California Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000790298     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.62.5100     Document Type: Article

References (46)

1. See, for example, A. Zunger, Mater. Res. Bull. 23, 15 (1998).
2. See, for example, C. W. White, J. D. Budai, S. P. Withrow, J. G. Zhu, E. Sonder, R. A. Zuhr, A. Meldrum, D. M. Hembree, Jr., D. O. Henderson, and S. Prawer, Nucl. Instrum. Methods Phys. Res. B 141, 228 (1998).
3. See, for example, H. A. Atwater, K. V. Shcheglov, S. S. Wong, K. J. Vahala, R. C. Flagan, L. Brongersma, and A. Polman, in Materials Synthesis and Processing Using Ion Beams, edited by R. J. Culbertson, K. S. Jones, O. W. Holland, and K. Maex, MRS Symposia Proceedings No. 316 (Materials Research Society, Pittsburgh, 1994), p. 409.
4. C. W. White, J. D. Budai, J. G. Zhu, S. P. Withrow, R. A. Zuhr, D. M. Hembree, Jr., D. O. Henderson, A. Ueda, Y. S. Tung, R. Mu, and R. H. Magruder, J. Appl. Phys. 79, 1876 (1996).
5. S. Okamoto, Y. Kanemitsu, K. S. Min, and H. A. Atwater, Appl. Phys. Lett. 78, 1829 (1998).
6. A. Franceschetti and A. Zunger, Phys. Rev. B 52, 14 664 (1995).
7. Y. Kanemitsu, H. Tanaka, T. Kushida, K. S. Min, and H. A. Atwater, J. Appl. Phys. 86, 1762 (1999).
8. Y. Kanemitsu, N. Shimizu, S. Okamoto, T. Komoda, P. L. F. Hemment, and B. J. Sealy, in Advances in Microcrystalline and Nanocrystalline Semiconductors—1996, edited by R. W. Collins, P. M. Fauchet, I. Shimizu, J. C. Vial, T. Shimada, and A. P. Alivisatos, MRS Symposia Proceedings No. 456 (Materials Research Society, Pittsburgh, 1997), p. 99.
9. G. Davies, Phys. Rep. 176, 83 (1989).
10. K. R. Elliot, Phys. Rev. B 25, 1460 (1982).
11. See, for example, C. T. Foxon, J. A. Harvey, and B. A. Joyce, J. Phys. Chem. Solids 34, 1693 (1973).
12. See, for example, Y. Kanemitsu, Phys. Rep. 263, 1 (1995).
13. C. G. Granqvist and R. A. Buhrman, J. Appl. Phys. 47, 2200 (1976).
14. M. V. Rama Krishna and R. A. Friesner, J. Chem. Phys. 95, 8309 (1991).
15. See, for example, I. Mihalcescu, J. Vial, A. Bsiesy, F. Muller, R. Romestain, E. Martin, C. Delerue, M. Lannoo, and G. Allan, Phys. Rev. B 51, 17 605 (1995).
16. H. Akiyama, S. Koshiba, T. Someya, K. Wada, H. Noge, Y. Nakamura, T. Inoshita, A. Shimizu, and H. Sakaki, Phys. Rev. Lett. 72, 924 (1994).
17. J. Feldman, G. Peter, E. O. Gobel, P. Dawson, K. Moore, C. Foxon, and R. J. Elliot, Phys. Rev. Lett. 59, 2337 (1987).
18. T. Itoh, M. Furumiya, T. Ikehara, and C. Gourdon, Solid State Commun. 73, 271 (1990).
19. M. G. Bawendi, P. J. Carroll, W. L. Wilson, and L. E. Brus, J. Chem. Phys. 96, 946 (1992).
20. M. Nirmal, D. J. Norris, M. Kuno, M. G. Bawendi, Al. L. Efros, and M. Rosen, Phys. Rev. Lett. 75, 3728 (1995).
21. Al. L. Efros, M. Rosen, M. Kuno, M. Nirmal, D. J. Norris, and M. Bawendi, Phys. Rev. B 54, 4843 (1996).
22. A. Franceschetti and A. Zunger, Phys. Rev. Lett. 78, 915 (1997).
23. A. Franceschetti, L. W. Wang, H. Fu, and A. Zunger, Phys. Rev. B 58, R13 367 (1998).
24. P. D. Calcott, K. J. Nash, L. T. Canham, M. J. Kane, and D. Brumhead, J. Phys.: Condens. Matter 5, L91 (1993).
25. Y. Kanemitsu, S. Okamoto, M. Otobe, and S. Oda, Phys. Rev. B 55, R7375 (1997).
26. Phys. Rev. BY. Kanemitsu and S. Okamoto, 58, 9652 (1998).
27. A. Franceschetti and A. Zunger, Appl. Phys. Lett. 68, 3455 (1997).
28. T. Kawazoe and Y. Masumoto, Phys. Rev. Lett. 77, 4942 (1996).
29. Y. Kanemitsu, M. Ando, H. Tanaka and T. Kushida (unpublished). Free or bound excitons nonradiatively decay through ionization, tunneling, and capture by traps at the interface and/or in the (Formula presented)glass. After thermal annealing at high temperature 100 K, the trapped carriers release from traps and the neutralization of nanocrystals occurs. The hole-burning and hole-filling phenomena are caused by the ionization and neutralization of nanocrystals.
30. See, example, Y. Masumoto, J. Lumin. 70, 386 (1996).
31. D. Kovalev, H. Heckler, B. Averboukh, M. Ben-Chorin, M. Schwartzkopff, and F. Koch, Phys. Rev. B 57, 3741 (1998).
32. T. Itoh, M. Nakashima, A. I. Ekimov, C. Gourdon, Al. L. Efros, and M. Rosen, Phys. Rev. Lett. 74, 1645 (1995).
33. K. Inoue, A. Yamanaka, K. Toda, A. V. Barabov, A. A. Onushchenko, and A. V. Fedorov, Phys. Rev. B 54, R8321 (1996).
34. D. J. Norris, Al. Efros, M. Rosen, and M. G. Bawendi, Phys. Rev. B 53, 16 347 (1996).
35. M. Chamarro, G. Gourdon, P. Lavallard, O. Lublinskaya, and A. I. Ekimov, Phys. Rev. B 53, 1336 (1996).
36. J. J. Shiang, S. H. Risbud, and A. P. Alivisatos, J. Chem. Phys. 98, 8432 (1993).
37. G. Scamarcio, V. Spagnolo, G. Ventruti, M. Lugara, and G. C. Rigini, Phys. Rev. B 53, R10 489 (1996).
38. S. Nomura and T. Kobayashi, Phys. Rev. B 45, 1305 (1992).
39. L. W. Thewalt, E. C. Lightowlers, and J. I. Pankove, Appl. Phys. Lett. 46, 689 (1985).
40. J. Weber, S. J. Pearton, and W. C. Dautremont-Smith, Appl. Phys. Lett. 49, 1181 (1986).
41. J. Chevallier, B. Clerjaud, and B. Pajot, Semicond. Semimet. 34, 447 (1991).
42. Y. Kanemitsu, H. Tanaka, K. Kushida, K. S. Min, and H. A. Atwater, J. Lumin. 87-89, 432 (2000).
43. See, for example, L. Brus, J. Phys. Chem. 90, 2555 (1990).
44. O. I. Micic and A. J. Nozik, J. Lumin. 70, 95 (1996).
45. A. J. Nozik and O. I. Micic, Mater. Res. Bull. 23, 24 (1998).
46. M. A. Olshavsky, A. N. Goldstein, and A. P. Alivisatos, J. Am. Chem. Soc. 112, 9438 (1990).