Luminescence properties of GaAs nanocrystals fabricated by sequential ion implantation

Journal of Luminescence

Volumn 87, Issue , 2000, Pages 432-434

  Kanemitsu, Y ^a   Tanaka, H ^a   Kushida, T ^a   Min, K S ^b   Atwater, H A ^b  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b California Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BAND STRUCTURE; HYDROGEN; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS;

NANOCRYSTALS; SEQUENTIAL ION IMPLANTATION;

PHOTOLUMINESCENCE;

EID: 0033728539     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(99)00452-4     Document Type: Article

References (12)

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