Optical and electrical properties of porous gallium arsenide

Semiconductors

Volumn 34, Issue 6, 2000, Pages 732-736

  Averkiev, N S ^a   Kazakova, L P ^a   Lebedev, E A ^a   Rud', Yu V ^a   Smirnov, A N ^a   Smirnova, N N ^a  

^a IOFFE INSTITUTE   (Russian Federation)

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EID: 0034195835     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1188063     Document Type: Article

References (19)

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