Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates

Technical Physics Letters

Volumn 25, Issue 1, 1999, Pages 1-3

  Mamutin, V V ^a   Ulin, V P ^a   Tret'yakov, V V ^a   Ivanov, S V ^a   Konnikov, S G ^a   Kop'ev, P S ^a  

^a IOFFE INSTITUTE   (Russian Federation)

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EID: 0033248258     PISSN: 10637850     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1262360     Document Type: Article

References (8)

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