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Volumn 195, Issue 1 SPEC, 2003, Pages 67-73

Effects of electrochemical attack on GaAs (100) surfaces

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; CRYSTAL DEFECTS; CURRENT DENSITY; DISLOCATIONS (CRYSTALS); ELECTRIC POTENTIAL; ELECTROCHEMISTRY; ETCHING; NANOSTRUCTURED MATERIALS; POROUS MATERIALS; WATER;

EID: 0037274935     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200306300     Document Type: Conference Paper
Times cited : (7)

References (13)
  • 4
    • 0013316984 scopus 로고
    • NATO Advanced Research Workshop Heterostructure Epitaxy and Devices. Smolenice, Slovakia, 15-19 October, (Kluwer, Dordrecht)
    • K. Somogyi, Sz. Varga, Ch. Grattepain, and L. Dobos, in: NATO Advanced Research Workshop Heterostructure Epitaxy and Devices. Smolenice, Slovakia, 15-19 October 1995, NATO ASI Series 3, Vol. 11 (Kluwer, Dordrecht, 1996), p. 53.
    • (1995) NATO ASI Series 3 , vol.11 , pp. 53
    • Somogyi, K.1    Varga, Sz.2    Grattepain, Ch.3    Dobos, L.4
  • 6
    • 0013321105 scopus 로고    scopus 로고
    • Properties of Gallium Arsenide, 3rd Edn, ed. M. P. Brozel and G. E. Stillman, (INSPEC)
    • H. L. Hartnagel and R. Riemenschneider, Properties of Gallium Arsenide, 3rd Edn, ed. M. P. Brozel and G. E. Stillman, EMIS Datareviews Series No. 16 (INSPEC, 1996), pp. 477-481.
    • (1996) EMIS Datareviews Series , vol.16 , pp. 477-481
    • Hartnagel, H.L.1    Riemenschneider, R.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.