Ultra-thin photoresists for 193 nm lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5039 I, Issue , 2003, Pages 393-403

  Peters, Richard D ^a   Amblard, Gilles ^b   Lee, J J ^a   Guenther, Todd ^a  

^a MOTOROLA INC   (United States)

^b ADVANCED MICRO DEVICES   (United States)

Author keywords

193 nm lithography; Line edge roughness (LER); Photo acid generator (PAG); Time of flight secondary ion mass spectrometry (ToF SIMS); Ultra thin photoresist

Indexed keywords

ABSORPTION; INTEGRATED CIRCUIT MANUFACTURE; INTERFACES (MATERIALS); LITHOGRAPHY; REDUCTION; SECONDARY ION MASS SPECTROMETRY; SURFACE ROUGHNESS; THICKNESS MEASUREMENT; ULTRAVIOLET RADIATION;

EXTREME ULTRAVIOLET LITHOGRAPHY; LINE EDGE ROUGHNESS; PHOTOACID GENERATOR; ULTRATHIN PHOTORESISTS;

PHOTORESISTS;

EID: 0141723372     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.485132     Document Type: Conference Paper

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