Effects of annealing on the properties of Cu/low k polymer/Si structures prepared by plasma polymerization of decahydronaphthalene and tetraethylorthosilicate and Cu sputtering

Thin Solid Films

Volumn 415, Issue 1-2, 2002, Pages 83-87

  Shim, Cheonman ^a,b   Yang, Jaeyoung ^a,b   Jung, Seungman ^a,b   Jung, Donggeun ^a,b  

^a Institute for Basic Science   (South Korea)

^b Sungkyunkwan University   (South Korea)

Author keywords

Copper; Decahydronaphthalene, Tetraethylorthosilicate; Low dielectric constant materials; Plasma polymer

Indexed keywords

ANNEALING; COPPER; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; NAPHTHALENE; PERMITTIVITY; PLASMA POLYMERIZATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SILICATE MINERALS;

LOW DIELECTRIC CONSTANT MATERIALS;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0036670779     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)00538-2     Document Type: Article

References (19)