TiN and TaN diffusion barriers in copper interconnect technology: Towards a consistent testing methodology

Journal of Electronic Materials

Volumn 30, Issue 4, 2001, Pages 345-348

  Kizil, Huseyin ^a   Kim, Gusung ^a   Steinbrüchel, Christoph ^a   Zhao, Bin ^b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b Conexant Systems Inc ^*  (United States)

Author keywords

Bias temperature stress; Capacitance voltage; Copper; Diffusion barrier; Leakage current; Silicon dioxide; TaN; TiN

Indexed keywords

ANNEALING; CAPACITANCE; CHEMICAL MECHANICAL POLISHING; COPPER; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION IN SOLIDS; INTEGRATED CIRCUIT TESTING; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOS CAPACITORS; SECONDARY ION MASS SPECTROMETRY; STRESS ANALYSIS; TANTALUM COMPOUNDS; TITANIUM NITRIDE;

BIAS TEMPERATURE STRESS (BTS); INTERLAYER DIELECTRICS (ILD);

MICROELECTRONICS;

EID: 0035306816     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-001-0041-z     Document Type: Article

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