Ultrathin oxynitride films formed by using pulse-time-modulated nitrogen beams

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 7 B, 2003, Pages

  Samukawa, Seiji ^a   Minemura, Youichi ^a   Fukuda, Seiichi ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b SONY CORPORATION   (Japan)

Author keywords

Beam; Gate dielectric film; Metal oxide semiconductor; Nitridation; Oxynitride; Plasma

Indexed keywords

CARBON; DIFFUSION; INDUCTIVELY COUPLED PLASMA; ION BOMBARDMENT; NITRIDES; NITROGEN; PLASMA SOURCES; ULSI CIRCUITS; ULTRATHIN FILMS;

CARBON PLATES; PULSE TIME MODULATED NITROGEN BEAMS; ULTRATHIN SILICON OXYNITRIDE FILMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0141606747     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l795     Document Type: Letter

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