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Journal of Materials Science: Materials in Electronics

Volumn 8, Issue 2, 1997, Pages 91-94

Effects of the integrity of silicon thin films on the electrical characteristics of thin dielectric ONO film

(8) Kim, Dong Won a Kim, Kap Jung a Kim, Dong Il b Lee, Won Jun b Lee, Seung Yun b Lee, Young J c Rha, Sa Kyun b Park, Chong Ook b

a Kyonggi University (South Korea)

b Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

c Hynix Semiconductor Inc (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CAPACITANCE; CAPACITORS; CHEMICAL VAPOR DEPOSITION; DIELECTRIC FILMS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRODES; HEAT TREATMENT; LEAKAGE CURRENTS; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; THIN FILMS;

OXIDE NITRIDE OXIDE FILMS; TIME DEPENDENT DIELECTRIC BREAKDOWN;

SEMICONDUCTING FILMS;

EID: 0031122490 PISSN: 09574522 EISSN: None Source Type: Journal
DOI: 10.1023/A:1018517423772 Document Type: Article

Times cited : (3)

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