The effect of electron cyclotron resonance plasma parameters on the aspect ratio of trenches in HgCdTe

Journal of Electronic Materials

Volumn 32, Issue 7, 2003, Pages 692-697

  Stoltz, A J ^a   Benson, J D ^a   Boyd, P R ^b   Martinka, M ^a   Varesi, J B ^c   Kaleczyc, A W ^a   Smith, E P G ^c   Johnson, S M ^c   Radford, W A ^c   Dinan, J H ^a  

^a NIGHT VISION AND ELECTRONIC SENSORS DIRECTORATE   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c RAYTHEON COMPANY   (United States)

Author keywords

Aspect ratio; Electron cyclotron resonance (ECR); Etch lag; Focal plane array (FPA); HgCdTe (mercury cadmium telluride); Plasma; Reactive ion etching (RIE)

Indexed keywords

ASPECT RATIO; ELECTRON CYCLOTRON RESONANCE; PLASMAS; REACTIVE ION ETCHING;

TRENCHES;

MERCURY COMPOUNDS;

EID: 0043269236     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0054-x     Document Type: Conference Paper

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