Molecular beam epitaxial growth and performance of HgCdTe-based simultaneous-mode two-color detectors

Journal of Electronic Materials

Volumn 27, Issue 6, 1998, Pages 747-751

  Rajavel, R D ^a   Jamba, D M ^a   Jensen, J E ^a   Wu, O K ^a   Brewer, P D ^a   Wilson, J A ^b   Johnson, J L ^b   Patten, E A ^b   Kosai, K ^b   Caulfield, J T ^b   Goetz, P M ^b  

^a Hughes Aircraft Co   (United States)

^b Santa Barbara Research Center   (United States)

Author keywords

HgCdTe; Infrared detectors; Molecular beam epitaxy (MBE); Multi spectral detectors; Two color detectors

Indexed keywords

EID: 0001765754     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0047-x     Document Type: Article

References (15)

1. R.D. Rajavel, D.M. Jamba, O.K. Wu, J.A. Roth, P.D. Brewer, J.E. Jensen, C.A. Cockrum, G.M. Venzor and S.M. Johnson, J. Electron. Mater. 25, 1410 (1996).
2. D.D. Edwall, M. Zanadian, A.C. Chen and J.M. Arias, J. Electron Mater. 26, 493 (1997).
3. J.A. Wilson, E.A. Patten, G.R. Chapman, K. Kosai, B. Baumgratz, P. Goetz, S. Tighe, R. Risser, R. Herald, W.A. Radford, T. Tung and W.A. Terre, SPIE 2274, 117 (1994).
4. T.J. de Lyon, J. Vigil, J.E. Jensen, O.K. Wu, J.L. Johnson, E.A. Patten, K. Kosai and P. Goetz, to be published in J. Vac. Sci. Technol.
5. R.D. Rajavel, D.M. Jamba, J.E. Jensen, O.K. Wu, C.A. Cockrum, J.A. Wilson, E.A. Patten, K. Kosai, J. Rosbeck, P. Goetz and, G. Venzor, Mater. Res. Soc. Symp. Proc. 450 (Pittsburgh, PA: Mater. Res. Soc., 1997), p. 257.
6. R.D. Rajavel, D.M. Jamba, O.K. Wu, J.E. Jensen, J.A. Wilson, E.A. Patten, K. Kosai, P. Goetz, G.R. Chapman and W.A. Radford, J. Cryst. Growth 175, 653 (1997).
7. R.D. Rajavel, D.M. Jamba, J.E. Jensen, O.K. Wu, J.A. Wilson, E.A. Patten, K. Kosai, J. Rosbeck, P. Goetz, J. Petersen and S.M. Johnson, presented at the 1996 U.S. Workshop on the Physics and Chemistry of II-VI Materials. Oct. 22-24, 1996, Las Vegas, NV.
8. J.S. Chen, U.S. Patent No. 4,897,152.
9. S.M. Johnson, J.B. Jones, W.L. Ahlgren, W.J. Hamilton, M. Ray and G.S. Tompa, Long Wavelength Semiconductor Devices, Materials, and Processes Vol. 216, ed. A. Katz, R.M. Biefield, R.L. Gunshor, and R.J. Malik, (Pittsburgh, PA: Materials Research Society, 1991), p. 141.
10. T. Colin, T. Skauli and S. Lovold, J. Cryst. Growth 175, 670 (1997).
11. T. Colin, and T. Skauli, J. Electron. Mater. 26, 688 (1997).
12. A. Parikh, S.D. Pearson, R.N. Bicknell-Tassius, L.H. Zhang, R. Benz and C. J. Summers, J. Electron. Mater. 26, 524 (1997).
13. P. Capper, Lattice parameter of HgCdTe, Narrow Gap Cadmium-based Compounds, EMIS Dataviews Series, ed. P. Capper, (London: INSPEC, 1994), p. 41.
14. J.C. Woolley and B. Ray, J. Phys. Chem. Solids 13, 151 (1960).
15. S.M. Johnson, D.R. Rhiger, J.P. Rosbeck, J.M. Peterson, S.M. Taylor and M.E. Boyd, J. Vac. Sci. Technol. B 10, 1499 (1992).