Fullerene incorporation in DNQ novolak photoresist for increasing plasma etch resistance

Proceedings of SPIE-The International Society for Optical Engineering

Volumn 4690 II, Issue , 2002, Pages 1224-1227

  Benson, J D ^a   Stoltz, A J ^a   Kaleczyc, A W ^a   Dinan, J H ^a  

^a NIGHT VISION AND ELECTRONIC SENSORS DIRECTORATE   (United States)

Author keywords

DNQ novolak resist; Fullerene; Plasma etch

Indexed keywords

FULLERENES; HEAT RESISTANCE; PLASMA ETCHING; SEMICONDUCTOR DEVICE MANUFACTURE;

PLASMA ETCH RESISTANCE;

PHOTORESISTS;

EID: 0036029828     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.474200     Document Type: Article

References (16)

1. W.E. Tennant, M. Thomas, L.J. Kozlowski, W.V. McLevige, D.D. Edwall, M. Zandian, K. Spariosu, G. Hildebrandt, V. Gil, P. Ely, M. Muzilla, A. Stoltz, and J.H. Dinan, "A Novel Simultaneous Unipolar Multispectral Integrated Technology Approach for HgCdTe IR Detectors and Focal Plane Arrays," J. of Electronic Materials, 30, 590 (2001).
2. R.D. Rajavel, D.M. Jamba, J.E. Jensen, O.K. Wu, P.D. Brewer, J.A. Wilson, J.L. Johnson, E.A. Patten, K. Kosai, J.T. Caulfield, and P.M. Goetz, "Molecular Beam Epitaxial Growth and Performance of HgCdTe Based Simultaneous Mode Two Color Detectors," J. of Electronic Materials, 27, 747 (1998).
3. T.J. de Lyon, B. Baumgratz, G. Chapman, E. Gordon, A.T. Hunter, M. Jack, J. Jensen, W. Johnson, B. Johs, K. Kosai, W. Larsen, G.L. Olson, M. Sen, B. Walker, O.K. Wu, "MBE Growth Of HgCdTe Avalanche Photodiode Structures for Low-Noise 1.55 μm Photodetection," Journal of Crystal Growth, 201, 980 (1999).
4. P. O'Dette, G. Tarnowski, V. Lukach, M. Krueger, and P. LoVecchio, "Optimization of Dry Etch Process Conditions for HgCdTe Detector Arrays," J. Electronic Materials, 28, 821 (1999).
5. A.J. Stoltz, J.D. Benson, Mason Thomas, P.R. Boyd, M. Martinka, and J.H. Dinan, "Development of a High Selectivity Process for Electron Cyclotron Resonance Plasma Etching of II-VI Semiconductors," J. Electronic Materials to be published.
6. J.D. Benson, A.J. Stoltz, A.W. Kaleczyc, M. Martinka, L.A. Almeida, P.R. Boyd, and J.H. Dinan, "Effect of Photoresist Feature Geometry on ECR Plasma Etch Reticulation of HgCdTe Diodes," J. Electronic Materials to be published.
7. H. Gokan, S. Esho, and Y. Ohnishi, "Dry Etch Resistance of Organic Materials," J. Electrochem. Soc. 130, 143 (1983).
8. R.R. Kunz, S.C. Palmateer, A.R. Forte, R.D. Allen, G.M. Wallraff, R.A. DiPietro, and D.C. Hofer, "Limits to etch resistance for 193-nm Single-Layer Resists," Proc. Spie 2724, 365 (1996).
9. P.M. Dentinger and J.W. Taylor, "Increasing Plasma Etch Resistance Of Resists using Fullerene Additives," J. Vac. Sci. Technol., B15, 2575 (1997).
10. 60 Incorporated Nanocomposite Resist System for Practical Nanometer Pattern Fabrication," J. Vac. Sci. Technol., B15, 2570 (1997).
11. 60 in a Variety of Solvents," J. Phy. Chem., 97, 3379 (1993).
12. R. Dammel, "Diazonapthoquinone Based Resists," SPIE Tutorial Texts, TT 11, ed. by D.C. O'Shea (1993).
13. S.C. Narang, S.C. Ventura, S. Ganapathiappan, T.R. Bhardwaj, and A. Nigam, Patent # 5367051 (1994).
14. A. Nigam, T. Shekharam, T. Bharadwaj, J. Giovanola, S. Narang, and R. Malhotra, "Lattice-type Polymers from an Adduct of (60)Fullerene and 2-Methylaziridine," J. Chem. Soc. Chem. Commun., 35, 1547 (1995).
15. T. Tada and T. Kanayama, "Nanolithogrphy using Fullerene Films as an Electron Beam Resist," Jpn. J. Appl. Phys., 35 part 2, L63 (1996).
16. A.P.G. Robinson, R.E. Palmer, T. Tada, T. Kanayama, and J.A. Preece, "A Fullerene Derivative as an Electron Beam Resist for Nanolithogrphy," Appl. Phys. Lett., 72, 1302 (1998).