![]() |
Volumn 31, Issue 7, 2002, Pages 822-826
|
Effect of photoresist-feature geometry on electron-cyclotron resonance plasma-etch reticulation of HgCdTe diodes
a b b a a c a |
Author keywords
CdZnTe; Electron cyclotron resonance; HgCdTe; Isolation trench; Sidewall aspect ratio
|
Indexed keywords
ANISOTROPY;
ASPECT RATIO;
ELECTRON CYCLOTRON RESONANCE;
PHOTODIODES;
PHOTOLITHOGRAPHY;
PHOTORESISTS;
PLASMA ETCHING;
SEMICONDUCTING CADMIUM COMPOUNDS;
WET CHEMICAL ETCHING;
MERCURY COMPOUNDS;
|
EID: 0036637873
PISSN: 03615235
EISSN: None
Source Type: Journal
DOI: 10.1007/s11664-002-0244-y Document Type: Article |
Times cited : (18)
|
References (20)
|