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Volumn 31, Issue 7, 2002, Pages 822-826

Effect of photoresist-feature geometry on electron-cyclotron resonance plasma-etch reticulation of HgCdTe diodes

Author keywords

CdZnTe; Electron cyclotron resonance; HgCdTe; Isolation trench; Sidewall aspect ratio

Indexed keywords

ANISOTROPY; ASPECT RATIO; ELECTRON CYCLOTRON RESONANCE; PHOTODIODES; PHOTOLITHOGRAPHY; PHOTORESISTS; PLASMA ETCHING; SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0036637873     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0244-y     Document Type: Article
Times cited : (18)

References (20)
  • 12
    • 85011873744 scopus 로고    scopus 로고
    • Resists were from the Clariant Corporation, Somerville, NJ


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.