Selective plasma etching for high-aspect-ratio oxide contact holes

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 1, 1998, Pages 327-331

  Kim, Yun Sang ^a   Wei, Peter Ta Chin ^a,b   Tynan, George R ^a   Charatan, Robert ^a   Hemker, Dave ^a  

^a Trikon Technologies Inc   (United States)

^b CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

Author keywords

Downstream; Helicon wave plasma; High density plasma; Inhibitors; Oxide etch; RIE lag; Selectivity

Indexed keywords

FLUOROCARBONS; HELICONS; PLASMA ETCHING; POLYMERS; PRESSURE EFFECTS; REACTIVE ION ETCHING;

OXIDE CONTACT HOLES;

PHOTORESISTS;

EID: 0031647585     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.37.327     Document Type: Article

References (17)

1. J. P. McVittie and S. Dohmae: Proc. 9th Plasma Processing Symp., 1992 p. 11.
2. P. Singer: Semicond. Int. (1997) No. 6, 107.
3. W. Tsai, G. Mueller, R. Lindquist, B. Frazier and V. Vahedi: J. Vac. Sci. Technol. B 14 (1996) 797.
4. Y. Hikosaka, H. Toyoda and H. Sugai: Jpn. J. Appl. Phys. 32 (1993) L690.
5. J. A. O'Neil and J. Singh: J. Appl. Phys. 77 (1995) 497.
6. H. Sugai, K. Nakamura, Y. Hikosaka and M. Nakamura: J. Vac. Sci. Technol. A 13 (1995) 887.
7. P. Benuyer, P. Rabinzohn, R. Blanc, H. Ullmann, Y. Morand, A. M. Papon and A. Campo: Proc. 12th Int. VMIC Conf., 1995 p. 551.
8. A. J. Lamm and M. Carrasco: Vacuum 45 (1994) 555.
9. J. W. Coburn and E. Kay: Solid State Technol. (1979) ApI., 117.
10. O. Joubert, G. S. Oehrlein and Y. Zhang: J. Vac. Sci. Technol. A 12 (1994) 658.
11. S. C. McNevin: J. Vac. Sci. Technol. A 13 (1995) 797.
12. H. Shan, B. K. Srinivasan, D. W. Jillie, Jr., J. S. Multan and W. J. Lo: J. Electrochem. Soc. 141 (1994) 2904.
13. G. R. Tynan, A. D. Bailey III, G. A. Campbell, R. Charatan, A. de Chambrier, G. Gibson, D. J. Hemker, K. Jones, A. Kuthi, C. Lee and M. Wilcoxson: submitted to J. Vac. Sci. Technol. A.
14. T. Akimoto, H. Nanbu and E. Ikawa: J. Vac. Sci. Technol. B 13 (1995) 2390.
15. A. C. Westerheim, A. H. Labun, J. H. Dubash, J. C. Arnold, H. H. Sawin and V. Yu-Wang: J. Vac. Sci. Technol. A 13 (1995) 853.
16. O. Joubert, G. S. Oehrlein and M. Surendra: J. Vac. Sci. Technol. A 12 (1994) 665.
17. D. X. Ma, T. R. Webb, A. Zaho, Z. Huang, D. Tajima and P. K. Loewenhardt: Proc. 11 th Plasma Processing Symp., 1996 p. 250.