The influence of photoresist feature geometry on ECR plasma etched HgCdTe trenches

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4795, Issue , 2002, Pages 129-135

  Benson, J D ^a   Stoltz, A J ^a   Kaleczyc, A W ^b   Martinka, M ^a   Almeida, L A ^a   Boyd, P R ^c   Dinan, J H ^a  

^a US Army Communications and Electronics Command   (United States)

^b EOIR Measurements Inc   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

Electron cyclotron resonance; Etch anisotropy; Etch bias; HgCdTe

Indexed keywords

ANISOTROPY; ASPECT RATIO; ELECTRON CYCLOTRON RESONANCE; MASKS; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; PHOTOLITHOGRAPHY; PHOTORESISTS; SEMICONDUCTING CADMIUM COMPOUNDS; THIN FILMS;

ETCH ANISOTROPY; IMAGE DISTORTION; MERCURY CADMIUM TELLURIDE; PRINTED RESIST PATTERN;

PLASMA ETCHING;

EID: 0036989583     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.451921     Document Type: Article

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