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Volumn 77, Issue 20, 1996, Pages 4206-4209

Epitaxial growth of si

Author keywords

[No Author keywords available]

Indexed keywords


EID: 6144238390     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.77.4206     Document Type: Article
Times cited : (23)

References (20)
  • 1
    • 85035215328 scopus 로고
    • New York, The Physics of MOS Insulators
    • S. T. Pantelides (Pergamon, New York, 1978). The Physics of MOS Insulators.
    • (1978) Pergamon
    • Pantelides, S.T.1
  • 4
    • 0004005306 scopus 로고
    • Wiley, New York), 2nd ed., p. 379., E. A. Irene, CRC Crit. Rev. Solid State Sci., 14, 175, (1988). CCSCBX
    • S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), 2nd ed., p. 379., E. A. Irene, CRC Crit. Rev. Solid State Sci., 14, 175, (1988). CCSCBX
    • (1981) Physics of Semiconductor Devices
    • Sze, S.M.1
  • 19
    • 85035211324 scopus 로고
    • (
    • Interscience, New York, 4th ed.S. T. Pantelides and W. A. Harrison, Phys. Rev. B, 13, 2667, (1976)., PRBMDO
    • R. W. G. Wyckhoff, Crystal Structures (Interscience, New York, 1974), 4th ed.S. T. Pantelides and W. A. Harrison, Phys. Rev. B, 13, 2667, (1976). PRBMDO
    • (1974) Crystal Structures
    • Wyckhoff, R.W.G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.