Defect states due to silicon dangling bonds at the Si(100)/SiO2 interface and the passivation by hydrogen atoms

Materials Research Society Symposium - Proceedings

Volumn 592, Issue , 2000, Pages 39-44

  Kaneta, C ^a   Yamasaki, T ^a   Uchiyama, T ^a   Uda, T ^b   Terakura, K ^b  

^a FUJITSU LABORATORIES LTD   (Japan)

^b JRCAT   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; DEFECTS; ELECTRON ENERGY LEVELS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; HYDROGEN; PARAMAGNETIC RESONANCE; PASSIVATION; SEMICONDUCTING SILICON; SILICA;

INTERFACE STATES; SILICON DANGLING-BONDS;

INTERFACES (MATERIALS);

EID: 0034497279     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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