X-ray diffraction evidence for the existence of epitaxial microcrystallites in thermally oxidized SiO2 thin films on Si(111) surfaces

Journal of Crystal Growth

Volumn 166, Issue 1-4, 1996, Pages 786-791

  Shimura, T ^a   Misaki, H ^a   Umeno, M ^a   Takahashi, I ^b   Harada, J ^c  

^a OSAKA UNIVERSITY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

^c UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; ETCHING; LIGHT SCATTERING; MATHEMATICAL MODELS; SILICA; SILICON; THIN FILMS; X RAY CRYSTALLOGRAPHY;

BRAGG POINT; HIGH RESOLUTION X RAY MEASUREMENTS; LAUE FUNCTION LIKE FINE STRUCTURE;

EPITAXIAL GROWTH;

EID: 0030230757     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00496-3     Document Type: Article

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