SiC planar MOS-Schottky diode: A high voltage Schottky diode with low leakage current

Solid-State Electronics

Volumn 45, Issue 7, 2001, Pages 1085-1089

  Zhang, Q ^a   Madangarli, V ^a   Sudarshan, T S ^a  

^a The Department of Mechanical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; LEAKAGE CURRENTS; MOS DEVICES; SILICON CARBIDE; SPUTTER DEPOSITION;

REVERSE BREAKDOWN CHARACTERISTICS;

SCHOTTKY BARRIER DIODES;

EID: 0035390829     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00145-9     Document Type: Article

References (5)

1. Trench MOS barrier Schottky (TMBS) rectifier: A Schottky rectifier with higher than parallel plane breakdown voltage
2. The graded doped trench MOS barrier Schottky rectifier: A low forward drop high voltage rectifier
3. Lateral current spreading in SiC Schottky diodes using field-plate edge termination