Junction barrier Schottky diodes in 6H SiC

Solid-State Electronics

Volumn 42, Issue 9, 1998, Pages 1757-1759

  Zetterling, Carl Mikael ^a   Dahlquist, Fanny ^a   Lundberg, Nils ^a   Östling, Mikael ^a   Rottner, Kurt ^b   Ramberg, Lennart ^c  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b ABB CORPORATE RESEARCH   (Sweden)

^c ACREO AB   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; LEAKAGE CURRENTS; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE;

JUNCTION BARRIER SCHOTTKY (JBS) DIODES;

SCHOTTKY BARRIER DIODES;

EID: 0032163723     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00142-7     Document Type: Article

References (11)

1. Crofton, J. and Sriram, S., IEEE Trans. Electron Devices, 1996, 43, 2305.
2. Bhatnagar, M., Baliga, B. J., Kirk, H. R. and Rozgonyi, G. A., IEEE Trans. Electron Devices, 1996, 43, 150.
3. Kimoto, T., Urushidani, T., Kobayashi, S. and Matsunami, H., IEEE Electron Device Lett., 1993, 14, 548.
4. Lundberg, N., Östling, M., Tägtström, P. and Jansson, U., J. Electrochem. Soc., 1996, 143, 1662.
5. Baliga, B. J., IEEE Electron Device Lett., 1984, 5, 194.
6. Baliga, B. J., Solid-State Electron., 1985, 28, 1089.
7. Biersack, J. P. and Haggmark, L. G., Nucl. Instrum. Methods, 1980, 174, 257.
8. Ziegler, J. F., Biersack, J. P. and Littmark, U., The Stopping and Range of Ions in Solids, Vol. 1, ed. J. F. Ziegler. Pergamon, New York, 1985.
9. Pensl, G., Afanas'ev, V. V., Bassler, M., Schadt, M., Treffer, T., Heindl, J., Strunk, H. P., Maier, M. and Choyke, W. J., Inst. Phys. Conf. Ser., 1995, 142, 275.
10. Waldrop, J. R. and Grant, R. W., Appl. Phys. Lett., 1993, 62, 2685.
11. Itoh, A., Kimoto, T. and Matsunami, H., Inst. Phys. Conf. Ser., 1995, 142, 689.