Transistor design for 90 nm-generation and beyond

Fujitsu Scientific and Technical Journal

Volumn 39, Issue 1, 2003, Pages 9-22

  Sugii, Toshihiro ^a   Watanabe, Kiyoshi ^a   Sugatani, Shinji ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC INSULATORS; GATES (TRANSISTOR); LASER APPLICATIONS; MOSFET DEVICES; TECHNOLOGY;

GATE LENGTH; LASER ANNEALING;

INTEGRATED CIRCUIT LAYOUT;

EID: 0041697029     PISSN: 00162523     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (16)

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