Low standby power CMOS with HfO2 gate oxide for 100-nm generation

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue , 2002, Pages 28-29

  Pidin, S ^a   Morisaki, Y ^a   Sugita, Y ^a   Aoyama, T ^a   Irino, K ^a   Nakamura, T ^a   Sugii, T ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; MOSFET DEVICES; POLYSILICON; STANDBY POWER SYSTEMS;

GATE DIELECTRICS;

CMOS INTEGRATED CIRCUITS;

EID: 0036045975     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)