A notched metal gate MOSFET for sub-0.1 μm operation

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 659-662

  Pidin, S ^a   Mushiga, M ^a   Shido, H ^a   Yamamoto, T ^a   Sambonsugi, Y ^a   Tamura, Y ^a   Sugii, T ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); INTERFERENCE SUPPRESSION; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE; TITANIUM NITRIDE;

NOTCHED TRANSISTOR GATES; SHORT CHANNEL EFFECTS;

MOSFET DEVICES;

EID: 0034452643     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)