Self-aligned control of threshold voltages in sub-0.2-urn MOSFET's

IEEE Transactions on Electron Devices

Volumn 45, Issue 10, 1998, Pages 2161-2166

  Kurata, Hajime ^a   Sugii, Toshihiro ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Ion implantation; Mosfet's; Semiconductor device doping; Semiconductor device fabrication; Simulation

Indexed keywords

COMPUTER SIMULATION; ION IMPLANTATION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE; VOLTAGE CONTROL;

SELF-ALIGNED VOLTAGE CONTROL;

MOSFET DEVICES;

EID: 0032187496     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.725250     Document Type: Article

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