Continued growth in CMOS beyond 0.10 μm

Solid-State Electronics

Volumn 46, Issue 3, 2002, Pages 329-336

  Sugii, T ^a   Momiyama, Y ^a   Goto, K ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Channel engineering; Cryo mos; Decaborane; Double gate; Indium; Scaling; Ta2O5

Indexed keywords

ANNEALING; ELECTRIC INSULATORS; GATES (TRANSISTOR); IMPURITIES; ION IMPLANTATION; LSI CIRCUITS; SEMICONDUCTOR GROWTH;

CHANNEL IMPURITY; GATE INSULATORS;

CMOS INTEGRATED CIRCUITS;

EID: 0036498336     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00104-6     Document Type: Article

References (15)