New physical model for NVM data-retention time-to-failure

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1999, Pages 19-23

  De Salvo, B ^a   Ghibaudo, G ^a   Pananakakis, G ^a   Guillaumot, B ^a   Candelier, P ^a   Reimbold, G ^a  

^a Grenoble INP Phelma   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CELLULAR ARRAYS; ELECTRIC CHARGE; ELECTRIC CURRENTS; FAILURE ANALYSIS; GATES (TRANSISTOR); HIGH TEMPERATURE TESTING; MODELS; NONVOLATILE STORAGE; OXIDES; THRESHOLD VOLTAGE;

CHARGE LOSS; DATA RETENTION TIME TO FAILURE; LIFE TESTING; THRESHOLD VOLTAGE SHIFT;

RELIABILITY THEORY;

EID: 0032659635     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (20)