Calibrated contamination spiking method for silicon wafers in the 1010-1012 atom/cm2 range

Journal of the Electrochemical Society

Volumn 146, Issue 6, 1999, Pages 2245-2253

  Holzl R ^a,b   Range, K J ^b   Fabry, L ^a   Huber, D ^a  

^a SILTRONIC AG   (Germany)

^b UNIVERSITY OF REGENSBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; CAPACITANCE MEASUREMENT; CHEMICAL ANALYSIS; CHEMISORPTION; COMPUTER SIMULATION; CONTAMINATION; COPPER; IRON; NICKEL;

CALIBRATED CONTAMINATION SPIKING METHOD; IMMERSION SPIKING; SPIN ON TECHNIQUE;

SILICON WAFERS;

EID: 0344183062     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391922     Document Type: Article

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