-
1
-
-
36149012731
-
Annealing of electron-irradiated GaAs
-
Sept.
-
L. W. Aukerman and R. D. Graft, "Annealing of electron-irradiated GaAs," Phys. Rev., vol. 127, no. 5, pp. 1576-1583, Sept. 1962.
-
(1962)
Phys. Rev.
, vol.127
, Issue.5
, pp. 1576-1583
-
-
Aukerman, L.W.1
Graft, R.D.2
-
2
-
-
36849125415
-
Band-filling current in heavily doped GaAs diodes
-
M. F. Millea and L. W. Aukerman, "Band-Filling current in heavily doped GaAs diodes," J. Appl. Phys., vol. 37, pp. 2585-2586, 1966.
-
(1966)
J. Appl. Phys.
, vol.37
, pp. 2585-2586
-
-
Millea, M.F.1
Aukerman, L.W.2
-
3
-
-
0038377067
-
Effects of radiation damage on the behavior of GaAs p-n junctions
-
Dec.
-
L. W. Aukerman, M. F. Millea, and M. McColl, "Effects of radiation damage on the behavior of GaAs p-n junctions," IEEE Trans. Nucl. Sci., vol. 13, pp. 174-180, Dec. 1966.
-
(1966)
IEEE Trans. Nucl. Sci.
, vol.13
, pp. 174-180
-
-
Aukerman, L.W.1
Millea, M.F.2
McColl, M.3
-
4
-
-
84936896992
-
Mechanisms of radiation effects on lasers
-
Dec.
-
D. M. J. Compton and R. A. Cesena, "Mechanisms of radiation effects on lasers," IEEE Trans. Nucl. Sci., vol. 14, pp. 55-61, Dec. 1967.
-
(1967)
IEEE Trans. Nucl. Sci.
, vol.14
, pp. 55-61
-
-
Compton, D.M.J.1
Cesena, R.A.2
-
5
-
-
0038377068
-
Radiation effects in electroluminescent diodes
-
Dec.
-
C. E. Barnes, "Radiation effects in electroluminescent diodes," IEEE Trans. on Nucl. Sci., vol. 18, pp. 322-331, Dec. 1971.
-
(1971)
IEEE Trans. on Nucl. Sci.
, vol.18
, pp. 322-331
-
-
Barnes, C.E.1
-
6
-
-
0018468377
-
A comparison of gamma -irradiation-induced degradation in amphoterically Si-doped GaAs LED's and Zn-diffused LED's
-
____, "A comparison of gamma -Irradiation-Induced degradation in amphoterically Si-doped GaAs LED's and Zn-diffused LED's," IEEE Trans. Electron. Devices, vol. 26, pp. 739-745, 1979.
-
(1979)
IEEE Trans. Electron. Devices
, vol.26
, pp. 739-745
-
-
Barnes, C.E.1
-
7
-
-
0037701123
-
Radiation damage constants of light-emitting diodes by a low-current evaluation method
-
Dec.
-
R. H. Hum and A. L. Barry, "Radiation damage constants of light-emitting diodes by a low-current evaluation method," IEEE Trans. Nucl. Sci., vol. 22, pp. 2482-2487, Dec. 1975.
-
(1975)
IEEE Trans. Nucl. Sci.
, vol.22
, pp. 2482-2487
-
-
Hum, R.H.1
Barry, A.L.2
-
8
-
-
0008562820
-
Radiation damage and annealing effects in photon coupled isolators
-
Dec.
-
A. S. Epstein and P. A. Trimmer, "Radiation damage and annealing effects in photon coupled isolators," IEEE Trans. Nucl. Sci., vol. 20, pp. 391-399, Dec. 1972.
-
(1972)
IEEE Trans. Nucl. Sci.
, vol.20
, pp. 391-399
-
-
Epstein, A.S.1
Trimmer, P.A.2
-
9
-
-
0024174933
-
Displacement damage in GaAs structures
-
Dec.
-
G. P. Summers et al., "Displacement damage in GaAs structures," IEEE Trans. Nucl. Sci., vol. 35, pp. 1221-1227, Dec. 1988.
-
(1988)
IEEE Trans. Nucl. Sci.
, vol.35
, pp. 1221-1227
-
-
Summers, G.P.1
-
11
-
-
0017514809
-
Design parameters of frequency response of GaAs-(Ga,Al)As double heterostructure LED's for optical communications
-
July
-
K. Ikeda et al., "Design parameters of frequency response of GaAs-(Ga,Al)As double heterostructure LED's for optical communications," IEEE Trans. Electron. Devices, vol. 24, pp. 1001-1005, July 1977.
-
(1977)
IEEE Trans. Electron. Devices
, vol.24
, pp. 1001-1005
-
-
Ikeda, K.1
-
12
-
-
0034313047
-
Optoelectronic devices based on III-V compound semiconductors which have made a major scientific and technological impact in the past 20 years
-
June
-
M. Razeghi, "Optoelectronic devices based on III-V compound semiconductors which have made a major scientific and technological impact in the past 20 years," IEEE J. Select. Topics Quantum Electron., vol. 6, pp. 1344-1354, June 2000.
-
(2000)
IEEE J. Select. Topics Quantum Electron.
, vol.6
, pp. 1344-1354
-
-
Razeghi, M.1
-
13
-
-
0034313093
-
Strained-layer InGaAs quantum-well heterostructure lasers
-
June
-
J. J. Coleman, "Strained-Layer InGaAs quantum-well heterostructure lasers," IEEE J. Select. Topics Quantum Electron., vol. 6, pp. 1008-1013, June 2000.
-
(2000)
IEEE J. Select. Topics Quantum Electron.
, vol.6
, pp. 1008-1013
-
-
Coleman, J.J.1
-
14
-
-
0035263864
-
Design and characterization of AlGaInAs-InP multiple-quantum-well lasers
-
Feb.
-
S. R. Selmic et al., "Design and characterization of AlGaInAs-InP multiple-quantum-well lasers," IEEE J. Select. Topics Quantum Electron., vol. 7, pp. 340-349, Feb. 2001.
-
(2001)
IEEE J. Select. Topics Quantum Electron.
, vol.7
, pp. 340-349
-
-
Selmic, S.R.1
-
15
-
-
0024611937
-
Theoretical gain of strained-layer semiconductors in the large strain regime
-
C. Chong and C. G. Fonstad, "Theoretical gain of strained-layer semiconductors in the large strain regime," IEEE J. Quantum Electron., vol. 25, pp. 171-178, 1989.
-
(1989)
IEEE J. Quantum Electron.
, vol.25
, pp. 171-178
-
-
Chong, C.1
Fonstad, C.G.2
-
16
-
-
0030784170
-
Low threshold and high temperature operation of InGaAslAS-InP lasers
-
Jan.
-
T. R. Chen et al., "Low threshold and high temperature operation of InGaAslAS-InP lasers," IEEE Photon. Technol. Lett., vol. 9, pp. 17-18, Jan. 1997.
-
(1997)
IEEE Photon. Technol. Lett.
, vol.9
, pp. 17-18
-
-
Chen, T.R.1
-
17
-
-
0038382314
-
Review of displacement damage effects in silicon devices
-
June
-
J. R. Srour, "Review of displacement damage effects in silicon devices," IEEE Trans. Nucl. Sci., vol. 50, pp.-, June 2003.
-
(2003)
IEEE Trans. Nucl. Sci.
, vol.50
-
-
Srour, J.R.1
-
18
-
-
0038377328
-
Primary recoil spectra and subcascade effects in ion bombardments effects
-
R. M. More and J. A. Spitznagel, "Primary recoil spectra and subcascade effects in ion bombardments effects," Radiation Effects, vol. 60, no. 27, pp. 27-33, 1982.
-
(1982)
Radiation Effects
, vol.60
, Issue.27
, pp. 27-33
-
-
More, R.M.1
Spitznagel, J.A.2
-
19
-
-
0023573795
-
Comparison of proton and neutron carrier removal rates
-
R. L. Pease, E. W. Enlow, and G. L. Dinger, "Comparison of proton and neutron carrier removal rates," IEEE Trans. Nucl. Sci., vol. 34, pp. 1140-1146, 1987.
-
(1987)
IEEE Trans. Nucl. Sci.
, vol.34
, pp. 1140-1146
-
-
Pease, R.L.1
Enlow, E.W.2
Dinger, G.L.3
-
20
-
-
0037701126
-
A model for the damage produced by fast neutrons in gallium arsenide
-
R. Coates and E. Mitchell, "A model for the damage produced by fast neutrons in gallium arsenide," in Proc. Int. Conf. Radiation Damage and Defects in Semiconductors, Reading, U.K., July 1972, p. 96.
-
Proc. Int. Conf. Radiation Damage and Defects in Semiconductors, Reading, U.K., July 1972
, pp. 96
-
-
Coates, R.1
Mitchell, E.2
-
21
-
-
0019714771
-
Enhanced annealing of GaAs solar cell damage
-
R. Loo, R. C. Knechtli, and G. S. Kamath, "Enhanced annealing of GaAs solar cell damage," Proc. 15th IEEE Photovoltaic Specialties Conf., vol. 33, 1981.
-
(1981)
Proc. 15th IEEE Photovoltaic Specialties Conf.
, vol.33
-
-
Loo, R.1
Knechtli, R.C.2
Kamath, G.S.3
-
23
-
-
0038038794
-
Effects of γ-irradiation upon lifetime and luminescence of GaP diodes
-
R. A. Logan, H. G. White, and R. M. Mikulyak, "Effects of γ-Irradiation upon lifetime and luminescence of GaP diodes," Appl. Phys. Lett., vol. 5, no. 3, pp. 41-42, 1964.
-
(1964)
Appl. Phys. Lett.
, vol.5
, Issue.3
, pp. 41-42
-
-
Logan, R.A.1
White, H.G.2
Mikulyak, R.M.3
-
24
-
-
0017631380
-
Development of efficient, radiation-insensitive GaAss:Zn LED's
-
Dec.
-
C. E. Barnes, "Development of efficient, radiation-insensitive GaAss:Zn LED's," IEEE Trans. Nucl. Sci., vol. 24, pp. 2309-2314, Dec. 1977.
-
(1977)
IEEE Trans. Nucl. Sci.
, vol.24
, pp. 2309-2314
-
-
Barnes, C.E.1
-
25
-
-
0038038796
-
Neutron damage in GaAs laser diodes: At and above laser threshold
-
Dec.
-
____, "Neutron damage in GaAs laser diodes: At and above laser threshold," IEEE Trans. Nucl. Sci., vol. 19, pp. 382-385, Dec. 1972.
-
(1972)
IEEE Trans. Nucl. Sci.
, vol.19
, pp. 382-385
-
-
Barnes, C.E.1
-
26
-
-
0000264412
-
Observation of recombination-enhanced defect reactions in semiconductors
-
D. V. Lang and L. C. Kimerling, "Observation of recombination-enhanced defect reactions in semiconductors," Phys. Rev. Lett., vol. 33, no. 8, pp. 489-492, 1974.
-
(1974)
Phys. Rev. Lett.
, vol.33
, Issue.8
, pp. 489-492
-
-
Lang, D.V.1
Kimerling, L.C.2
-
27
-
-
0031386894
-
200 MeV proton damage effects on multi-quantum well laser diodes
-
Dec.
-
Y. F. Zhao, A. R. Patwary, R. D. Schrimpf, M. A. Neifeld, and K. F. Galloway, "200 MeV proton damage effects on multi-quantum well laser diodes," IEEE Trans. Nucl. Sci., vol. 44, pp. 1898-1905, Dec. 1997.
-
(1997)
IEEE Trans. Nucl. Sci.
, vol.44
, pp. 1898-1905
-
-
Zhao, Y.F.1
Patwary, A.R.2
Schrimpf, R.D.3
Neifeld, M.A.4
Galloway, K.F.5
-
28
-
-
0033324761
-
Proton damage in advanced laser diodes
-
Dec.
-
A. H. Johnston et al., "Proton damage in advanced laser diodes," IEEE Trans. Nucl. Sci., vol. 46, pp. 1781-1789, Dec. 1999.
-
(1999)
IEEE Trans. Nucl. Sci.
, vol.46
, pp. 1781-1789
-
-
Johnston, A.H.1
-
29
-
-
0035721932
-
Proton damage in advanced laser diodes
-
Dec.
-
A. H. Johnston, T. F. Miyahira, and B. G. Rax, "Proton damage in advanced laser diodes," IEEE Trans. Nucl. Sci., vol. 48, pp. 1764-1772, Dec. 2001.
-
(2001)
IEEE Trans. Nucl. Sci.
, vol.48
, pp. 1764-1772
-
-
Johnston, A.H.1
Miyahira, T.F.2
Rax, B.G.3
-
30
-
-
0003799473
-
-
JPL Publication 96-9, Jet Propulsion Laboratory, California Inst. Technol.
-
B. E. Anspaugh, GaAs Solar Cell Radiation Handbook: JPL Publication 96-9, Jet Propulsion Laboratory, California Inst. Technol., 1996.
-
(1996)
GaAs Solar Cell Radiation Handbook
-
-
Anspaugh, B.E.1
-
31
-
-
0023565384
-
Energy dependence of proton-induced damage in GaAs
-
Dec.
-
E. A. Burke et al., "Energy dependence of proton-induced damage in GaAs," IEEE Trans. Nucl. Sci., vol. 34, pp. 1220-1227, Dec. 1987.
-
(1987)
IEEE Trans. Nucl. Sci.
, vol.34
, pp. 1220-1227
-
-
Burke, E.A.1
-
32
-
-
0029517909
-
The energy dependence of lifetime damage constants in GaAs LED's for 1-500 MeV protons
-
A. L. Barry et al., "The energy dependence of lifetime damage constants in GaAs LED's for 1-500 MeV protons," IEEE Trans. Nucl. Sci., vol. 42, pp. 2104-2107, 1995.
-
(1995)
IEEE Trans. Nucl. Sci.
, vol.42
, pp. 2104-2107
-
-
Barry, A.L.1
-
33
-
-
0034452349
-
Energy dependence of proton damage in AlGaAs light-emitting diodes
-
Dec.
-
R. A. Reed et al., "Energy dependence of proton damage in AlGaAs light-emitting diodes," IEEE Trans. Nucl. Sci., vol. 47, pp. 2492-2499, Dec. 2000.
-
(2000)
IEEE Trans. Nucl. Sci.
, vol.47
, pp. 2492-2499
-
-
Reed, R.A.1
-
34
-
-
0034450452
-
Characterization of proton damage in light-emitting diodes
-
Dec.
-
A. H. Johnston and T. F. Miyahira, "Characterization of proton damage in light-emitting diodes," IEEE Trans. Nucl. Sci., vol. 47, pp. 2500-2507, Dec. 2000.
-
(2000)
IEEE Trans. Nucl. Sci.
, vol.47
, pp. 2500-2507
-
-
Johnston, A.H.1
Miyahira, T.F.2
-
35
-
-
0038377073
-
Electroluminescence characteristics and efficiency of GaAs:Si diodes
-
I. Ladany, "Electroluminescence characteristics and efficiency of GaAs:Si diodes," J. Appl. Phys., vol. 42, no. 2, pp. 654-656, 1971.
-
(1971)
J. Appl. Phys.
, vol.42
, Issue.2
, pp. 654-656
-
-
Ladany, I.1
-
36
-
-
0016551958
-
GaAs-(Ga,Al)As double heterostructure light emitting diode
-
Apr.
-
K. Ikeda et al., "GaAs-(Ga,Al)As double heterostructure light emitting diode," IEEE Trans. Electron. Devices, vol. 22, p. 799, Apr. 1975.
-
(1975)
IEEE Trans. Electron. Devices
, vol.22
, pp. 799
-
-
Ikeda, K.1
-
37
-
-
0010833153
-
60 gamma irradiation on epitaxial GaAs laser diodes
-
60 Gamma irradiation on epitaxial GaAs laser diodes," Phys. Rev. B, vol. 1, no. 12, pp. 4735-4747, 1970.
-
(1970)
Phys. Rev. B
, vol.1
, Issue.12
, pp. 4735-4747
-
-
Barnes, C.E.1
-
38
-
-
0038038795
-
Neutron irradiation effects on diffused GaAs laser diodes
-
Dec.
-
B. W. Noel, C. E. Barnes, and H. D. Southward, "Neutron irradiation effects on diffused GaAs laser diodes," IEEE Trans. Nucl. Sci., vol. 18, pp. 378-386, Dec. 1971.
-
(1971)
IEEE Trans. Nucl. Sci.
, vol.18
, pp. 378-386
-
-
Noel, B.W.1
Barnes, C.E.2
Southward, H.D.3
-
39
-
-
0038715396
-
Performance of GaAlAs light emitting diodes, in radiation environments
-
Dec.
-
R. A. Polimadei et al., "Performance of GaAlAs light emitting diodes, in radiation environments," IEEE Trans. Nucl. Sci., vol. 21, pp. 96-102, Dec. 1974.
-
(1974)
IEEE Trans. Nucl. Sci.
, vol.21
, pp. 96-102
-
-
Polimadei, R.A.1
-
40
-
-
0020102290
-
Proton damage effects on light-emitting diodes
-
B. H. Rose and C. E. Barnes, "Proton damage effects on light-emitting diodes," J. Appl. Phys., vol. 53, no. 3, pp. 1772-1780, 1982.
-
(1982)
J. Appl. Phys.
, vol.53
, Issue.3
, pp. 1772-1780
-
-
Rose, B.H.1
Barnes, C.E.2
-
41
-
-
0022223359
-
Electron irradiation of GaAsP LED's
-
Dec.
-
K. C. Dimiduk, C. Q. Ness, and J. E. Foley, "Electron irradiation of GaAsP LED's," IEEE Trans. Nucl. Sci., vol. 32, pp. 4010-4015, Dec. 1985.
-
(1985)
IEEE Trans. Nucl. Sci.
, vol.32
, pp. 4010-4015
-
-
Dimiduk, K.C.1
Ness, C.Q.2
Foley, J.E.3
-
42
-
-
0003381707
-
Radiation effects in light emitting diodes, photodiodes and optocouplers
-
H. Lischka et al., "Radiation effects in light emitting diodes, photodiodes and optocouplers," in Proc. 1993 RADECS Conf., pp. 226-231.
-
Proc. 1993 RADECS Conf.
, pp. 226-231
-
-
Lischka, H.1
-
43
-
-
0036624597
-
Energy dependence of proton damage in optical emitters
-
June
-
A. H. Johnston and T. F. Miyahira, "Energy dependence of proton damage in optical emitters," IEEE Trans. Nucl. Sci., vol. 49, pp. 1426-1431, June 2002.
-
(2002)
IEEE Trans. Nucl. Sci.
, vol.49
, pp. 1426-1431
-
-
Johnston, A.H.1
Miyahira, T.F.2
-
44
-
-
0005002221
-
Gain, refractive index change, and linewidth enhancement factor in broad-area GaAs and InGaAs quantum-well lasers
-
Nov.
-
J. Stohs et al., "Gain, refractive index change, and linewidth enhancement factor in broad-area GaAs and InGaAs quantum-well lasers," IEEE J. Quantum Electron., vol. 37, pp. 1449-1459, Nov. 2001.
-
(2001)
IEEE J. Quantum Electron.
, vol.37
, pp. 1449-1459
-
-
Stohs, J.1
-
45
-
-
0034313059
-
Cavity controlled semiconductors lasers
-
June
-
A. Mooradian, "Cavity controlled semiconductors lasers," IEEE J. Select. Topics Quantum Electron., vol. 6, pp. 1318-1324, June 2000.
-
(2000)
IEEE J. Select. Topics Quantum Electron.
, vol.6
, pp. 1318-1324
-
-
Mooradian, A.1
-
46
-
-
0016927128
-
Effects of proton bombardment on the properties of GaAs laser diodes
-
H. T. Minden, "Effects of proton bombardment on the properties of GaAs laser diodes," J. Appl. Phys., vol. 47, no. 3, pp. 1090-1094, 1976.
-
(1976)
J. Appl. Phys.
, vol.47
, Issue.3
, pp. 1090-1094
-
-
Minden, H.T.1
-
47
-
-
0024917490
-
Neutron effects in high-power GaAs laser diodes
-
Dec.
-
W. W. Chow and R. F. Carson, "Neutron effects in high-power GaAs laser diodes," IEEE Trans. Nucl. Sci., vol. 36, pp. 2076-2082, Dec. 1989.
-
(1989)
IEEE Trans. Nucl. Sci.
, vol.36
, pp. 2076-2082
-
-
Chow, W.W.1
Carson, R.F.2
-
48
-
-
0027851447
-
5.5 MeV proton irradiation of a strained quantum well laser diode and a multiple quantum-well broadband LED
-
Dec.
-
B. D. Evans, H. E. Hager, and B. W. Hughlock, "5.5 MeV proton irradiation of a strained quantum well laser diode and a multiple quantum-well broadband LED," IEEE Trans. Nucl. Sci., vol. 40, pp. 1645-1654, Dec. 1993.
-
(1993)
IEEE Trans. Nucl. Sci.
, vol.40
, pp. 1645-1654
-
-
Evans, B.D.1
Hager, H.E.2
Hughlock, B.W.3
-
49
-
-
0026943303
-
Low threshold current high-temperature operation of InGaA/AlGaAs strained-quantum-well lasers
-
Nov.
-
P. L. Deryy et al., "Low threshold current high-temperature operation of InGaA/AlGaAs strained-quantum-well lasers," IEEE Photon. Technol. Lett., vol. 4, pp. 1189-1191, Nov. 1992.
-
(1992)
IEEE Photon. Technol. Lett.
, vol.4
, pp. 1189-1191
-
-
Deryy, P.L.1
-
50
-
-
0027844647
-
Damage correlations in semiconductors exposed to gamma, electron and proton irradiation
-
Dec.
-
G. P. Summers et al., "Damage correlations in semiconductors exposed to gamma, electron and proton irradiation," IEEE Trans. Nucl. Sci., vol. 40, pp. 1372-1379, Dec. 1993.
-
(1993)
IEEE Trans. Nucl. Sci.
, vol.40
, pp. 1372-1379
-
-
Summers, G.P.1
-
51
-
-
0027591648
-
On the semiconductor laser logarithmic gain-current density relationship
-
May
-
T. A. DeTemple and C. M. Herzinger, "On the semiconductor laser logarithmic gain-current density relationship," IEEE J. Quantum Electron., vol. 29, pp. 1246-1252, May 1993.
-
(1993)
IEEE J. Quantum Electron.
, vol.29
, pp. 1246-1252
-
-
DeTemple, T.A.1
Herzinger, C.M.2
-
52
-
-
0031275596
-
Vertical-cavity surface emitting lasers: Moving from research to manufacturing
-
K. D. Choquette and H. Q. Hou, "Vertical-cavity surface emitting lasers: Moving from research to manufacturing," Proc. IEEE, vol. 85, no. 11, pp. 1730-1739, 1997.
-
(1997)
Proc. IEEE
, vol.85
, Issue.11
, pp. 1730-1739
-
-
Choquette, K.D.1
Hou, H.Q.2
-
53
-
-
0031258734
-
Design, fabrication and performance of infrared and visible vertical-cavity surface-emitting lasers
-
Oct.
-
W. W. Chow et al., "Design, fabrication and performance of infrared and visible vertical-cavity surface-emitting lasers," IEEE J. Quantum Electron., vol. 33, pp. 1820-1824, Oct. 1997.
-
(1997)
IEEE J. Quantum Electron.
, vol.33
, pp. 1820-1824
-
-
Chow, W.W.1
-
54
-
-
0031383170
-
AlGaAs vertical-cavity surface-emitting laser responses to 4.5-MeV proton irradiation
-
Dec.
-
H. Schöne et al., "AlGaAs vertical-cavity surface-emitting laser responses to 4.5-MeV proton irradiation," IEEE Photon. Technol. Lett., vol. 9, pp. 1552-1554, Dec. 1997.
-
(1997)
IEEE Photon. Technol. Lett.
, vol.9
, pp. 1552-1554
-
-
Schöne, H.1
-
55
-
-
0031367535
-
Damage from proton irradiation of vertical-cavity surface emitting lasers
-
Dec.
-
A. H. Paxton et al., "Damage from proton irradiation of vertical-cavity surface emitting lasers," IEEE Trans. Nucl. Sci., vol. 44, pp. 1893-1897, Dec. 1997.
-
(1997)
IEEE Trans. Nucl. Sci.
, vol.44
, pp. 1893-1897
-
-
Paxton, A.H.1
-
56
-
-
0035263926
-
High power laser diodes with dry-etched mirror facets and integrated monitor photodiodes
-
Feb.
-
E. Diechsel et al., "High power laser diodes with dry-etched mirror facets and integrated monitor photodiodes," IEEE J. Select. Topics Quantum Electron., vol. 7, pp. 106-110, Feb. 2001.
-
(2001)
IEEE J. Select. Topics Quantum Electron.
, vol.7
, pp. 106-110
-
-
Diechsel, E.1
-
57
-
-
0038715402
-
Radiation effects upon gallium arsenide devices
-
Dec.
-
R. H. Schnurr and H. D. Southward, "Radiation effects upon gallium arsenide devices," IEEE Trans. Nucl. Sci., vol. 15, pp. 306-310, Dec. 1968.
-
(1968)
IEEE Trans. Nucl. Sci.
, vol.15
, pp. 306-310
-
-
Schnurr, R.H.1
Southward, H.D.2
-
58
-
-
0030359989
-
Total dose and proton damage in optocouplers
-
Dec.
-
B. G. Rax, C. I. Lee, A. H. Johnston, and C. E. Barnes, "Total dose and proton damage in optocouplers," IEEE Trans. Nucl. Sci., vol. 43, pp. 3167-3173, Dec. 1996.
-
(1996)
IEEE Trans. Nucl. Sci.
, vol.43
, pp. 3167-3173
-
-
Rax, B.G.1
Lee, C.I.2
Johnston, A.H.3
Barnes, C.E.4
-
59
-
-
0036947770
-
Trends in optocoupler degradation
-
Dec.
-
T. F. Miyahira and A. H. Johnston, "Trends in optocoupler degradation," IEEE Trans. Nucl. Sci., vol. 49, pp. 2868-2873, Dec. 2002.
-
(2002)
IEEE Trans. Nucl. Sci.
, vol.49
, pp. 2868-2873
-
-
Miyahira, T.F.1
Johnston, A.H.2
-
60
-
-
0034206734
-
Proton damage in linear and digital optocouplers
-
June
-
A. H. Johnston and B. G. Rax, "Proton damage in linear and digital optocouplers," IEEE Trans. Nucl. Sci., vol. 47, pp. 675-681, June 2000.
-
(2000)
IEEE Trans. Nucl. Sci.
, vol.47
, pp. 675-681
-
-
Johnston, A.H.1
Rax, B.G.2
-
61
-
-
0031357734
-
Proton-induced transients in optocouplers: In-flight anomalies, ground irradiation test, mitigation and implications
-
Dec.
-
K. LaBel et al., "Proton-induced transients in optocouplers: In-flight anomalies, ground irradiation test, mitigation and implications," IEEE Trans. Nucl. Sci., vol. 44, pp. 1895-1892, Dec. 1997.
-
(1997)
IEEE Trans. Nucl. Sci.
, vol.44
, pp. 1895-1892
-
-
LaBel, K.1
-
62
-
-
0033324559
-
Angular and energy dependence of proton upset in optocouplers
-
Dec.
-
A. H. Johnston et al., "Angular and energy dependence of proton upset in optocouplers," IEEE Trans. Nucl. Sci., vol. 46, pp. 1335-1341, Dec. 1999.
-
(1999)
IEEE Trans. Nucl. Sci.
, vol.46
, pp. 1335-1341
-
-
Johnston, A.H.1
-
64
-
-
0032312007
-
Radiation response of a MEMS accelerometer: An electrostatic force
-
Dec.
-
L. D. Edmonds, G. M. Swift, and C. I. Lee, "Radiation response of a MEMS accelerometer: An electrostatic force," IEEE Trans. Nucl. Sci., vol. 45, pp. 2779-2788, Dec. 1998.
-
(1998)
IEEE Trans. Nucl. Sci.
, vol.45
, pp. 2779-2788
-
-
Edmonds, L.D.1
Swift, G.M.2
Lee, C.I.3
-
65
-
-
0036248651
-
Movable vertical mirror arrays for optical microswitch matrices and their electromagnetic actuation
-
Jan.
-
L. Houlet et al., "Movable vertical mirror arrays for optical microswitch matrices and their electromagnetic actuation," IEEE J. Select. Topics Quantum Electron., vol. 8, pp. 58-63, Jan. 2002.
-
(2002)
IEEE J. Select. Topics Quantum Electron.
, vol.8
, pp. 58-63
-
-
Houlet, L.1
-
67
-
-
0036244363
-
Optical MEMS devices based on moving waveguides
-
Jan.
-
E. Ollier, "Optical MEMS devices based on moving waveguides," IEEE J. Select. Topics Quantum Electron., vol. 8, pp. 155-162, Jan. 2002.
-
(2002)
IEEE J. Select. Topics Quantum Electron.
, vol.8
, pp. 155-162
-
-
Ollier, E.1
-
68
-
-
0031108933
-
High performance and novel effects of micromechanical tunable vertical-cavity lasers
-
Feb.
-
E. C. Vail et al., "High performance and novel effects of micromechanical tunable vertical-cavity lasers," IEEE J. Select. Topics Quantum Electron., vol. 3, pp. 691-697, Feb. 1997.
-
(1997)
IEEE J. Select. Topics Quantum Electron.
, vol.3
, pp. 691-697
-
-
Vail, E.C.1
-
70
-
-
0033685261
-
Obtaining high efficiency at low power using a quantum-dot microcavity light-emitting diode
-
June
-
H. Huang and D. G. Deppe, "Obtaining high efficiency at low power using a quantum-dot microcavity light-emitting diode," IEEE J. Quantum Electron., vol. 36, pp. 674-679, June 2000.
-
(2000)
IEEE J. Quantum Electron.
, vol.36
, pp. 674-679
-
-
Huang, H.1
Deppe, D.G.2
-
71
-
-
0036956110
-
Effects of proton irradiation on luminscence emission and carrier dynamics of quantum dots
-
Dec.
-
R. Leon et al., "Effects of proton irradiation on luminscence emission and carrier dynamics of quantum dots," IEEE Trans. Nucl. Sci., vol. 49, pp. 2844-2851, Dec. 2002.
-
(2002)
IEEE Trans. Nucl. Sci.
, vol.49
, pp. 2844-2851
-
-
Leon, R.1
-
72
-
-
0024915865
-
Enhanced displacement damage effectiveness in irradiated silicon devices
-
Dec.
-
J. R. Srour and R. A. Hartmann, "Enhanced displacement damage effectiveness in irradiated silicon devices," IEEE Trans. Nucl. Sci., vol. 36, pp. 1825-1830, Dec. 1989.
-
(1989)
IEEE Trans. Nucl. Sci.
, vol.36
, pp. 1825-1830
-
-
Srour, J.R.1
Hartmann, R.A.2
-
73
-
-
84939720264
-
Space radiation effects on optoelectronic materials and components for a 1300 nm fiber-optic data bus
-
Dec.
-
P.W. Marshall, C. J. Dale, and E. A. Burke, "Space radiation effects on optoelectronic materials and components for a 1300 nm fiber-optic data bus," IEEE Trans. Nucl. Sci., vol. 39, pp. 1982-198, Dec. 1992.
-
(1992)
IEEE Trans. Nucl. Sci.
, vol.39
, pp. 1982-1989
-
-
Marshall, P.W.1
Dale, C.J.2
Burke, E.A.3
|