200 MeV proton damage effects on multi-quantum well laser diodes

IEEE Transactions on Nuclear Science

Volumn 44, Issue 6 PART 1, 1997, Pages 1898-1905

  Zhao, Y F ^a   Patwary, A R ^b   Schrumpf, R D ^b   Neifeld, M A ^b   Galloway, K F ^a  

^a VANDERBILT UNIVERSITY   (United States)

^b University of Arizona   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CURRENTS; IRRADIATION; PROTONS; RADIATION DAMAGE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS;

PROTON IRRADIATION; THRESHOLD CURRENT DAMAGE FACTOR;

QUANTUM WELL LASERS;

EID: 0031386894     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.658959     Document Type: Article

References (17)

1. H. Lischka, P. Clemens, H. Henschel, O. Kohn, W. Lennartz and H.U. Schmidt, Radiation effects in optoelectronic devices, SPIE, pp. 43-52, Vol. 2425, 1994.
2. P.S. Zory Jr, Quantum Well Laser, Academic Press, Inc., 1993.
3. B.D. Evans, H.E. Hager and B.W. Hughlock, 5.5 MeV proton irradiation of a strained quantum well laser diode and a multiple quantum-well broadband LED, IEEE Tran, Nucl. Sei., Vol. 40, No. 6, pp. 1645-54, Dec. 1993.
4. R.F. Carson and W.W. Chow, Neutron effects in high power GaAs laser diodes, IEEE Trans. Nucl. Sei, Vol. 36, No. 6, pp. 2076-82, Dec. 1989.
5. C.E. Barnes, D. Heflinger and R. Reel, Effect of neutron irradiation on laser diode properties, SPIE, Vol. 1174, pp. 233-61, 1989.
6. B.D. Evans, Survivability of quantum-well optoelectronic devices for space applications, SPIE, Vol. 2215, pp. 23-28, 1994.
7. E.G. Stassinopoulos and J.P. Raymond, The space radiation environment for electronics, Proceeding of the IEEE, Vol. 76, pp. 1423-42, Nov. 1988
8. C.E. Barnes, Increased radiation hardness.of GaAs laser diodes at high current densities, J. Appl. Phys., Vol. 45, pp. 3485-9, 1974.
9. C.E. Barnes, Radiation hardened optoelectronic components: source, SPIE, Vol. 616, pp. 248-53, 1986.
10. I. Arimura, C.E. Barnes, Proton damage in laser diodes and light-emitting diodes(LEDs), SPIE, Vol. 328, pp. 83-7, 1982.
11. Y. Nagai, T. Shiba, Y. Kunitsugu, M. Miyashita, S. Karakida and H. Watanabe, Large area wafer processing for 0.78μm AlGaAs laser diodes, IEEE Photonics Tech. Lett., Vol. 7, No. 10, pp. 1101-1103, 1995.
12. A. Shima, M. Miyashita, T. Miura, T. Kadowaki, N. Hayafuji, M. Aiga and W. Susaki, Uniform and highpower characteristics of 780-nm AlGaAs TQW laser diodes fabricated by large scale MOCVD, IEEE Journal of Quantum Electronics, Vol. 30, No. 1, pp. 24-30, 1994.
13. S.M. Khanna, C. Rejjeb, A. Jorio, M. Parenteau, C. Carlone and J.W. Gerdes Jr, Electron and neutro n radiation-induced order effect in gallium arsenide, IEEE Trans. Nucl Sei, Vol. 40, No. 6, pp. 1350-9, Dec. 1993.
14. C.E. Barnes and J. J. Wiczer, Radiation effects in optoelectronic devices, Sandia National Laboratories Report Number SAND-84-0771, 1984.
15. G.P. Summers.E.A. Burke, M.A. Xapsos, C.J. Dale, P.W. Marshall and E.L. Petersen, Displaceme damage in GaAs structure, IEEE Trans. Nucl. Sei, Vol. 35, No. 6, pp. 1221-6, Dec. 1988.
16. Barry, A.J. Houdayer, P.P. Hinrichsen, W.G. Letourneau and J. Vincent, The energy dependence of lifetime damage constants in GaAs LEDs for 1 - 500 MeV proton, IEEE Trans. Nucl. Sei, Vol. 42, No. 6, pp. 2104, Dec. 1995.
17. J. Singh, Semi conductor optoelectronics physics and technology, McGraw-Hill, Inc., 1995.