Angular and energy dependence of proton upset in optocouplerst

IEEE Transactions on Nuclear Science

Volumn 46, Issue 6 PART 1, 1999, Pages 1335-1341

  Johnston, A H ^a   Miyahira, T ^a   Swift, G M ^a   Guertin, S M ^a   Edmonds, L D ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); IONIZATION; LIGHT EMITTING DIODES; OPTICAL FIBER COUPLING; PHOTODIODES;

CROSS SECTION; OPTOCOUPLERS; PROTON UPSET;

PROTONS;

EID: 0033324559     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.819091     Document Type: Article

References (14)

1. K, LaBel, P. W. Marshall, C. J. Marshall, M. D'Ordine, M. Carts, G. Lum, H. S. Kim, C. M. Seidlick, T. Powell, R. Abbot, J. Barth and E. G. Stassinopoulos, "Proton-Induced Transients in Optocouplers: In-Flight Anomalies, Ground Irradiation Test, Mitigation and Implications,"IEEE Trans. Nucl. Sei., 44, 1895 (1997).
2. A. H. Johnston, G. M. Swift, T. Miyahira, S. Guertin and L. D, Edmonds, "Single-Event Upset Effects in Optocouplers,"IEEE Trans, Nucl. Sei., 45, 2867 (1998).
3. R, Koga, S. D. Pinkerton, S. C, Moss, D. C. Mayer, S. LaLumodiere, S. J, Hansel, K, B. Crawford and W. R. Grain, "Observation of Single-Event Upsets in Analog Microcircuits,"IEEE Trans. Nucl. Set., 40, 1838 (1993).
4. R. Ecoffet, S. Duzellier, P. Tastet, C. Aicardi and M. Labrunee, "Observation of Heavy Ion Transients in Linear Circuits,"1994 IEEE Radiation Effects Data Workshop, IEEE 94TH08641,p. 72.
5. D. K. Nichols, J. R. Coss, T. F. Miyahira and H. R. Schwarte, "Heavy Ion and Proton Induced Single Event Transients in Comparators,"IEEE Trans, Nucl. Sei., 43, 2960 (1996).
6. T. L. Turflinger, "Single Event Effects in Analog and MixedSignal Integrated Circuits,"IEEE Trans. Nucl. Sei 43, 594 (1996).
7. R. Koga, S. H. Penzin, K. B, Crawford, W. R. Crain, S. C, Moss, S, D. Pinkerton, S. D. LaLumondiere and M. C. Mäher, "Single Event Upset Sensitivity Dependence of Linear Integrated Circuits on Bias Conditions,"IEEE Trans. Nucl. Sei., 44,2235(1997).
8. M. V. O'Bryan, et al "Single Event Effects and Radiation Damage Results for Candidate Spacecraft Electronics,"1998 IEEE Radiation Effects Data Workshop, IEEE Document 98TH08385, p. 39.
9. G. E. Farrell and P. J. McNulty, "Microdosimetric Aspects of Proton-Induced Nuclear Reactions in Thin Layers of Silicon,"IEEE Trans. Nucl. Sei., 29, 2012 (1982).
10. S. El Teleaty, G, E. Farrell and P, J. McNulty, "ChargeDeposition Spectra in Thin Slabs of Silicon Induced by Energetic Protons,"IEEE Trans. Nucl, Sei., 30, 4394 (1983).
11. M. W. Savage, P, J. McNulty, D. R. Roth and C, C. Foster, "Possible Role for Secondary Particles in Proton-Induced Single Event Upsets of Modern Devices,"IEEE Trans. Nucl. Sei., 45, 2745 (1998).
12. P. J. McNulty, "Single-Event Effects Experienced by Astronauts and Microelectronic Circuits Flown in Space,"IEEE Trans. Nucl. Sei., 43,475 (1996),
13. J. Barak, J. Levinson, M, Victoria and W. Hadjas, "Direct Processes in the Energy Deposition of Protons in Silicon,"IEEE Trans. Nucl. Sei., 43, 2820 (1996).
14. J. L. Barth, Modeling Space Environments, Section 1 of the Short Course Notes from the 1997 Nuclear and Space Radiation Effects Conference,