Zirconium silicate films obtained from novel MOCVD precursors

Journal of Non-Crystalline Solids

Volumn 322, Issue 1-3, 2003, Pages 147-153

  Lemberger, M ^a   Paskaleva, A ^a   Zurcher S ^b   Bauer, A J ^c   Frey, L ^a,c   Ryssel, H ^a,c  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b ETH ZURICH   (Switzerland)

^c FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; HYSTERESIS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR MATERIALS; STOICHIOMETRY; VOLTAGE MEASUREMENT;

ZIRCONIUM SILICATE FILMS;

ZIRCONIUM COMPOUNDS;

EID: 0038449181     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(03)00195-9     Document Type: Conference Paper

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