Reduced critical thickness for relaxing heteroepitaxial films on compliant substrates

Applied Physics Letters

Volumn 82, Issue 19, 2003, Pages 3209-3211

  Kastner G ^a   Gosele U ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHY; DISLOCATIONS (CRYSTALS); ELASTIC MODULI; ELASTICITY; INTERFACES (MATERIALS); MATHEMATICAL MODELS; NUMERICAL METHODS; PLASTICITY; RELAXATION PROCESSES; SHEAR STRESS; STRAIN; THIN FILMS; VISCOSITY;

HETEROEPITAXIAL FILMS;

EPITAXIAL GROWTH;

EID: 0038387264     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1573355     Document Type: Article

References (26)

1. J. W. Matthews, S. Mader, and T. B. Light, J. Appl. Phys. 41, 3800 (1970).
2. Y. H. Lo, Appl. Phys. Lett. 59, 2311 (1991).
3. A. R. Powell, S. S. Iyer, and K. F. LeGoues, Appl. Phys. Lett. 64, 1856 (1994).
4. F. E. Ejeckam, Y. H. Lo, S. Submaranian, H. Q. Hou, and B. E. Hammons, Appl. Phys. Lett. 70, 1685 (1997).
5. L. B. Freund and W. D. Nix, Appl. Phys. Lett. 69, 173 (1996).
6. C. Carter-Coman, R. Bicknell-Tassius, A. S. Brown, and N. M. Jokerst, Appl. Phys. Lett. 70, 1754 (1997).
7. N. El-Zein, J. Ramdani, K. Eisenbeiser, and R. Droopad, Int. Pat. No. WO 02/09150 A2, 2002.
8. B. Holländer, St. Lenk, S. Mantl, H. Trinkaus, D. Kirch, M. Luysberg, T. Hackbarth, H.-J. Herzog, and P. F. P. Fichtner, Nucl. Instrum. Methods Phys. Res. B 155-177, 357 (2001).
9. S. I. Romanov, V. I. Mashanov, L. V. Sokolov, A. Gutakovskii, and O. P. Pchelyakov, Appl. Phys. Lett. 75, 4118 (1999).
10. T. Ueno, T. Irisawa, Y. Shiraki, A. Uedono, S. Tanigawa, R. Suzuki, T. Ohdaira, and T. Mikado, J. Cryst. Growth 227, 761 (2001).
11. W. A. Jesser, J. H. van der Merwe, and P. M. Stoop, J. Appl. Phys. 85, 2129 (1999).
12. A. Bourret, Appl. Surf. Sci. 164, 3 (2000).
13. K. Vanhollebeke, I. Moerman, P. Van Daele, and P. Demeester, Prog. Cryst. Growth Charact. Mater. 41, 1 (2000).
14. A. S. Brown, W. A. Doolittle, N. M. Jolerst, S. Kang, S. Huang, and S. W. Seo, Mater. Sci. Eng., B 87, 317 (2001).
15. T. Y. Tan and U. Gösele, Appl. Phys. A: Mater. Sci. Process. 64, 631 (1997).
16. R. V. Kukta and L. B. Freund, Mater. Res. Soc. Symp. Proc. 535, 3 (1999).
17. G. Kästner and U. Gösele, J. Appl. Phys. 88, 4048 (2000).
18. P. D. Moran, D. M. Hansen, R. J. Matyi, L. J. Mawst, and T. F. Kuech, Appl. Phys. Lett. 76, 2541 (2000).
19. G. Kästner, Phys. Status Solidi A 195, 367 (2003).
20. H. Gao, L. Zhang, and S. P. Baker, J. Mech. Phys. Solids 50, 2169 (2002).
21. G. Kästner, U. Gösele, and T. Y. Tan, Appl. Phys. A: Mater. Sci. Process. 66, 13 (1998).
22. Y. Obayashi and K. Shintani, J. Appl. Phys. 88, 5623 (2000).
23. S. C. Jain, A. H. Harker, and R. A. Cowley, Philos. Mag. A 75, 1461 (1997).
24. D. D. Perovic and D. C. Houghton, Mater. Res. Soc. Symp. Proc. 263, 391 (1992).
25. J. W. Matthews, in Dislocations in Solids, edited by F. R. N. Nabarro (North Holland, Amsterdam, 1982), Vol. 2, p. 461.
26. R. Beanland, J. Appl. Phys. 72, 4031 (1992).