Present status of X-ray lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3412, Issue , 1998, Pages 88-98

  Yamabe, Masaki ^a  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

Author keywords

Resist; SR lithography; X ray exposure process; X ray lithography; X ray mask; X ray source; X ray stepper

Indexed keywords

MASKS; PHOTORESISTS; SEMICONDUCTOR DEVICE MANUFACTURE; ULTRAVIOLET RADIATION;

CRITICAL DIMENSION CONTROL; RESIST PROCESSING TOOLS; X RAY MASK; X RAY STEPPER;

X RAY LITHOGRAPHY;

EID: 0038335892     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.328836     Document Type: Conference Paper

References (38)

1. Semiconductor Industry Association (SIA), The National Technology Roadmap for Semiconductors, Semiconductor Industry Association, 1997.
2. S. Singh, M. Khan, F. Cerrina, and Y. Gomei, "Design study of scanning high power beamline", Digest of Papers XEL'97, p P-5-1, Yokohama, 1997.
3. Y. Watanabe, S. Hara, N. Mizusawa, Y. Fukuda, and S. Uzawa, "Novel illumination system of synchrotron radiation stepper with full field exposure method", J. Vac. Sci. Technol., B15, pp. 2503-2508, 1997.
4. N. Mizusawa, Y. Watanabe, S. Hara, K. Saitoh, H. Maehara, M. Amemiya, and S. Uzawa, "Current status of SR stepper development", Proc. SPIE 3096, pp. 230-239, 1997.
5. K. Uda, S. Uzawa, N. Mizusawa, Y. Tanaka, Y. Watanabe, and H. Hara, "X-ray stepper development for volume production at Canon", Proc. SPIE 3331, to be published
6. "Present status of ASET SR lithography development", Digest of papers International Forum on Semiconductor Technology 1998, pp. 55-58, Kyoto, 1998.
7. A Chen, A. L. Flamholz, R. Rippstein, R. H. Fair, D. A. Heald, and R. J. Amodeo, "Overlay performance of 180 nm ground rule generation X-ray lithography aligner", J. Vac. Sci. Technol., B15, pp. 2476-2482, 1997.
8. I. Okada, A. Motoyoshi, T. Sakakura, T. Ohkubo, M. Oda, H. Yoshihara, T. Matsuda, H. Noguchi, and Y. Kubota, "X-ray mask performance using SiC and diamond membrane techniques", Digest of Papers XEL'97, p P-1-1, Yokohama, 1997.
9. K. Marumoto, H. Yabe, Y. Matsui, H. Yamashita, and N. Kikuchi "Fabrication of diamond membrane for X-ray masks by hot-filament method", Jpn. J. Appl. Phys, 31, pp. 4205-4209, 1992.
10. M Yamada, K. Kondo, M. Nakaishi, J. Kudo, and K. Sugishima, "Process technologies for Ta/SiC X-ray masks", J. Electrochem. Soc., 137, pp. 2231-2242, 1990
11. T. Yoshihara, S. Kotsuji, and K. Suzuki, "Sputtered TaX film properties for X-ray mask absorbers", J. Vac. Sci. Technol., B14, pp. 4363-4365, 1996.
12. 4B absorber on siC membrane for X-ray mask", Proc. SPIE 2512, pp. 114-119, 1995.
13. W. J. Dauksher, D. J. Resnick, K. D. Cummings, J. Baker, R. B. Gregory, N. D. Theodore, J. A. Chan, W. A. Johnson, C. J. Mogab, M.-A. Nicolet, and J. S. Reid, "Method for fabricating a low stress X-ray mask using annealable amorphous refractory compounds", J. Vac. Sci. Technol., B13, pp. 3103-3108, 1995.
14. K. Marumoto, H. Yabe, S. Aya, K. Kise, and Y. Matsui., "Total evaluation of W-Ti absorber for X-ray mask", Proc. SPIE 2194, pp. 221-230, 1994.
15. Y. Iba, F. Kumasaka, T. Iizuka, H. Aoyama, and M. Yamabe, "Amorphous alloy film for X-ray mask absorber", Extended Abstracts (The 45th Spring Meeting, 1998), The Japan Society of Applied Physics and Related Societies, p. 726, Tokyo, 1998 (in Japanese).
16. Y. Iba, F. Kumasaka, H. Aoyama, T. Taguchi, and M. Yamabe, "Precise stress control of Ta absorber using low stress Alumina etching mask for X-ray mask fabrication", Jpn. J. Appl. Phys, 35, pp. 6463-6468, 1996.
17. Y. Iba, F. Kumasaka, H. Aoyama, T. Taguchi, and M. Yamabe, "Origin of stress distribution in sputtered X-ray absorber film", J. Vac. Sci. Tecnol., B15, pp. 2483-2488, 1997.
18. K. Kitamura, H. Yabe, K. Sasaki, S. Ami, K. Kise, S. Aya, and K. Marumoto, "A principle of deposition of ultra low and uniform stress absorber for X-ray mask", Jpn. J. Appl. Phys, 36, pp 7575-7579, 1997.
19. S. Tsuboi, S. Kotsuji, T. Yoshihara, and K. suzuki, "Low-stress sputtered chromium-nitride hardmask for X-ray mask fabrication", J. Vac. Sci. Tecnol., B15, pp. 2228-2231, 1997.
20. Y. Iba, F. Kumasaka, H. Aoyama, T. Taguchi, and M. Yamabe, "Patterning of X-ray absorber on SiC membrane by inductively coupled plasma", Extended Abstracts (The 58th Autumn Meeting, 1997), The Japan Society of Applied Physics, p. 697, Akita, 1997 (in Japanese).
21. S. Uchiyama, M. Oda, and T. Matsuda, "X-ray mask distortion correction technology using pattern displacement simulator", J. Vac. Sci. Tecnol., B14, pp. 4332-4335, 1996.
22. D. Puisto, M. Sturans, and M. Lawliss, "Overlay enhancement with product-specific emulation in electron-beam lithography tools", J. Vac. Sci. Tecnol., B12, pp. 3436-3439, 1994.
23. K. Saito, H. Morita, J. Kato, and N. Shimazu, "Electron optical system for the X-ray mask writer EB-X2", J. Vac. Sci. Tecnol., B15, pp. 2279-2283, 1997.
24. M. Polcari, "X-ray lithography: Technical status and development outlook", Digest of papers International Forum on Semiconductor Technology 1998, pp. 55-58, Kyoto, 1998.
25. D. J. Resnick, K. D. Cummings, W. J. Dauksher, W. A. Johnson, P. A. Seese, H. T. H. Chen, G. M. Wells, R. Engelstd, and F. Cerrina, "The effect of aperturing on radiation damage-induced pattern distortion of X-ray masks", J. Vac. Sci. Tecnol., B13, pp. 3046-3049, 1995.
26. I. Okada, M. Sekimoto, Y. Utsumi, Y. Saitoh, H. Ban, and T. Matsuda, "X-ray mask contamination by SR radiation", Extended Abstracts (The 58th Autumn Meeting, 1997), The Japan Society of Applied Physics, p. 698, Akita, 1997 (in Japanese).
27. C. Capasso, A. Pomerene, W. Chu, J. Leavey, A. Lamberti, S. Hector, J. Oberschmidt, and V. Pol, "X-ray induced mask contamination and particulate monitoring in X-ray steppers", J. Vac. Sci. Tecnol., B14, pp. 4336-4340, 1996.
28. K. Deguchi, K. Miyoshi, M. Oda, T. Matsuda, A. Ozawa, H. Yoshihara, "Extendibility of synchrotron radiation lithography to the sub-100 nm region", J. Vac. Sci. Tecnol., B14, pp. 4294-4297, 1996.
29. Y. Tanaka, K. Yamaguchi, T. Taguchi, S. Mitsui, K. Fujii, S. Tsuboi, H. Aoyama, Y. Nakayama, M. Yamabe, K. Suzuki, Y. Gomei, T. Hisatsugu, K. Deguchi, M. Fukuda, and H. Morita, "Effects of resist process on critical-dimension controllability", Extended Abstracts (The 45th Spring Meeting, 1998), The Japan Society of Applied Physics and Related Societies, p. 728, Tokyo, 1998 (in Japanese).
30. J. Z. Y. Guo and F. Cerrina, "Modeling X-ray proximity lithography", IBM J. Res. Develop., 37, pp. 331-349, 1993.
31. K. Fujii, Y. Tanaka, T. Taguchi, M. Yamabe, K. Suzuki, Y. Gomei, and Hisatsugu, "Low-dose exposure technique for 100-nm-diametwr hole replication", Extended Abstracts (The 45th Spring Meeting, 1998), The Japan Society of Applied Physics and Related Societies, p. 728, Tokyo, 1998 (in Japanese).
32. R. DellaGuardia, C. Wasik, D. Puisto, R. Fair, L. Liebman, J. Rocque, S. Nash, A. Lamberti, G. Collini, R. French, B. Vampatella, G. Gifford, V. Nastasi, P. Sa, and F. Volkringer, "Fabrication of 64 Megabit DRAM using X-ray lithography", Proc. SPIE 2437, pp. 112-125, 1995.
33. 3/Ru stacked capacitors using X-ray lithography", IEDM Tech. Digest, pp. 903-906, 1995.
34. K. Sunouchi, H. Kawaguchiya, S. Matsuda, H. Nomura, T. Shino, K. Murooka, D. Sugihara, S. Mitsui, K. Kondo, Y. Kikuchi, K. Deguchi, M. Fukuda, M. Oda, S. Uchiyama, M. Suzuki, T. Watanabe, and K. Yamada, "240 nm pitch 4GDRAM array MOSFET technologies with X-ray lithography", IEDM Tech. Digest, pp. 601-604, 1996.
35. S. Subbanna, E. Ganin, E. Crabbé, J. Comfort, S. Wu, P. Agnello, B. Martin, M. McCord, H. Ng, T. Newman, P. McFarland, J. Sun, J. Snare, A. Acovic, A. Ray, R. Gehres, R. Schulz, S. Greco, K. Beyer, L. Liebmann, R. DellaGuardia, and A. Lamberti, "200 nm process integration for 0.15 μ m channel-length CMOS technology using mixed X-ray/optical lithography", IEDM Tech. Digest, pp. 695-698, 1994.
36. K. Deguchi, K. Miyoshi, H. Ban, T. Matsuda, T. Ohno, and Y. Kado, "Fabrication of 0.2 μ m large scale integrated circuits using synchrotron radiation X-ray lithography", J. Vac. Sci. Tecnol., B13, pp. 3040-3045, 1995.
37. I. Okada, Y. Saitoh, M. Sekimoto, T. Ohkubo, and T. Matsuda, "Defect-free X-ray masks for 0.2 μ m large-scale integrated circuits", J. Vac. Sci. Tecnol., B14, pp. 4328-4331, 1996.
38. S. J. Wind, Y. Taur, Y. H. Lee, Y. Mill, R. G. Viswanathan, J. J. Bucchignano, A. T. Pomerene, R. M. Sicina, K. R. Milkove, J. W. Stiebritz, R. A. Roy, C. K. Hu, M. P. Manny, S. Cohen, and W. Chen "Lithography and fabrication processes of sub-100 nm scale complimentary metal-oxide", J. Vac. Sci. Tecnol., B13, pp. 2688-2695, 1995.