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Journal of Materials Science: Materials in Electronics

Volumn 14, Issue 5-7, 2003, Pages 271-277

AlGaN/GaN HEMTS: Material, processing, and characterization

(7) Calle, F a Palacios, T a Monroy, E a,e Grajal, J b Verdu M c Bougrioua, Z d,f Moerman, I d

a UNIVERSIDAD POLITÉCNICA DE MADRID (Spain)

b UNIVERSIDAD POLITÉCNICA DE MADRID (Spain)

c CIDA (Spain)

d GHENT UNIVERSITY (Belgium)

e CEA GRENOBLE (France)

f CRHEA CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

EVAPORATION; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; NUMERICAL METHODS; OPTIMIZATION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; TRANSCONDUCTANCE;

ALUMINUM GALLIUM NITRIDE; DISLOCATION DENSITY; GATE CONTACTS; ION BEAM MILLING; SURFACE PASSIVATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0038149140 PISSN: 09574522 EISSN: None Source Type: Journal
DOI: 10.1023/A:1023951323307 Document Type: Article

Times cited : (6)

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