Simulation of heavy-ion-induced failure modes in nMOS cells of ICs

IEEE Transactions on Nuclear Science

Volumn 48, Issue 6 I, 2001, Pages 2278-2284

  Loquet, Jean Gabriel ^a   David, Jean Pierre ^a   Duzellier, S ^a   Falguere D ^a   Nuns, T ^a  

^a ONERA   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ENERGY TRANSFER; FAILURE ANALYSIS; HEAVY IONS; INDUCED CURRENTS; INTEGRATED CIRCUITS; LEAKAGE CURRENTS; PARTICLE ACCELERATORS;

LINEAR ENERGY TRANSFER (LET);

MOSFET DEVICES;

EID: 0035722230     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.983207     Document Type: Article

References (10)

1. Calculation of heavy ion induced leakage current in nMOSFET
2. Heavy ions induced latent stuck bits revealed by total dose irradiation in 4T cell SRAMs
3. Heavy-ion induced single hard errors on submicronic memories
4. Heavy-ion/proton test results on high integrated memories
5. Statistical and small volume analysis of radiation effect on individual DRAM cell
6. Energy deposition by electron beams and δ rays
7. Ionization of SiO2 by heavy charged particles
8. Total dose failure in advanced electronics for single ions
9. Numerical simulation of hard errors induced by heavy ions in 4T high density SRAM cells