Surface treatment of silicon carbide using TiO2(IV) photocatalyst

Journal of the American Chemical Society

Volumn 125, Issue 21, 2003, Pages 6558-6562

  Ishikawa, Yoshie ^a   Matsumoto, Yasumichi ^a   Nishida, Yoko ^a   Taniguchi, Shinichi ^a   Watanabe, Junji ^a  

^a KUMAMOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIAMONDS; OXIDATION; PHOTOCATALYSIS; SURFACE TREATMENT; TITANIUM DIOXIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

VALANCE BANDS;

SILICON CARBIDE;

DIAMOND; REACTIVE OXYGEN METABOLITE; SILICON CARBIDE; SILICON DIOXIDE; TITANIUM DIOXIDE;

ARTICLE; CATALYSIS; CATALYST; CHEMICAL REACTION; DECOMPOSITION; OXIDATION; REACTION ANALYSIS; ROOM TEMPERATURE; SURFACE PROPERTY; THICKNESS; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0037837529     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja020359i     Document Type: Article

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