Selected-area deposition of diamond films on silicon nitride-coated silicon substrates using negatively biased microwave plasma enhanced chemical vapor deposition technique

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 11, 1997, Pages 6900-6904

  Chen, Yung Hsin ^a   Hu, Chen Ti ^a   Lin, I Nan ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Chemical vapor deposition; Diamond film; Microwave plasma; Negative bias; Optical emission spectroscopy; Raman spectroscopy; Scanning electron microscopy; Selected area deposition; Silicon rich nitride

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; ELECTRIC INSULATING COATINGS; ETCHING; FILM GROWTH; NUCLEATION; PLASMA APPLICATIONS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON NITRIDE; SILICON WAFERS; STOICHIOMETRY;

MICROWAVE PLASMAS; PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD); SELECTED AREA DEPOSITION (SAD);

DIAMOND FILMS;

EID: 0031271007     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.6900     Document Type: Article

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