Oxidation of ion implanted silicon carbide

Materials Science in Semiconductor Processing

Volumn 4, Issue 4, 2001, Pages 345-349

  Makhtari, A ^a,b   Raineri, V ^c   La Via, F ^c   Franzo G ^c   Frisina, F ^b   Calcagno, L ^a  

^a UNIVERSITY OF CATANIA   (Italy)

^b STMICROELECTRONICS   (Italy)

^c 50   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELLIPSOMETRY; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; THERMOOXIDATION;

MONOCRYSTALLINE MATERIALS;

SILICON CARBIDE;

EID: 0035427689     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(01)00002-6     Document Type: Article

References (23)

1. Shnai K., Scott R.S., Baliga B.J. IEEE Trans Electr Devices. 36:1989;1811.
2. Edmond J.A., Das K., Davis R.F. J Appl Phys. 63:1988;922.
3. Muench W.V., Pfaffender I. J Appl Phys. 48:1977;4831.
4. Rao M.V., Griffiths P., Holland O.W., Kelner G., Freitas J.A., Simons S.D., Chi P.H., Ghezzo M. J Appl Phys. 77:1995;2479.
5. Palmour J., Kong H.S., Davis R.F. Appl Phys Lett. 51:1987;2028.
6. Bhatnagar M., Baliga B.J. IEEE Trans Electron Dev. ED-40:1993;645.
7. Zheng Z., Tressler R.E., Spear K.E. J Electr Soc. 137:1990;854.
8. Hornetz B., Michel H.J., Halbritter J. J Vac Sci Technol. A13:1995;767.
9. Alok D., Baliga B.J. IEEE Electr Dev Lett. 15:1994;424.
10. Alok D., Baliga B.J. J Electr Soc. 144:1997;1135.
11. Ogbuji L.U.J.T., Opila E.J. J Electr Soc. 142:1995;925.
12. Ueno K., Seki Y. Jpn J Appl Phys. 33:1994;1121.
13. Ahmed W., Ahmed E. J Mat Sci. 29:1994;184.
14. Gotzlich J.F., Haberger K., Ryssel H., Kranz H., Traumuller E. Rad Eff. 47:1980;203.
15. Suzuki A., Ashida H., Furui N., Mameno K., Matsunami H. Jpn J Appl Phys. 21:1982;579.
16. Deal B.E., Grove A.S. J Appl Phys. 36:1965;3770.
17. Sze SM. in: "Vlsi technology", McGraw-Hill Series in Electrical Engineering. Electronics and Electronic Circuits, 1988.
18. Wesch W. Nucl Instr and Meth B. 116:1996;305.
19. Calcagno L., Grimaldi M.G., Musumeci P. J Mater Res. 12:1997;1727.
20. Bohn H.G., Williams J.M., MacHargue C.J., Begun G.M. J Mater Res. 2:1987;107.
21. McHargue C.J., Williams J.M. Nucl Instr and Meth B. 80/81:1993;889.
22. Pacaud Y., Skorupa W., Stoemenos J. Nucl Instr and Meth B. 120:1996;181.
23. Flemish J.R., Xie K., Withrow S.P. J Electrochem Soc. 142:1995;L144.