Effects of ozone treatment of 4H-SiC(0001) surface

Applied Surface Science

Volumn 159, Issue , 2000, Pages 550-555

  Kosugi, R ^a,b   Ichimura, S ^a,b   Kurokawa, A ^a   Koike, K ^a   Fukuda, K ^b   Suzuki, S ^b   Okushi, H ^a,b   Yoshida, S ^a,b   Arai, K ^a,b  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b Ultra Low Loss Pwr Device TRB   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; BINDING ENERGY; CURVE FITTING; OXIDATION; OZONE; PRESSURE EFFECTS; SILICON CARBIDE; SURFACE CLEANING; ULTRAVIOLET RADIATION; X RAY PHOTOELECTRON SPECTROSCOPY;

GAUSSIAN FUNCTIONS; OZONE TREATMENT;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0034207180     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00092-1     Document Type: Article

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