1/f noise model of fully overlapped lightly doped drain MOSFET

IEEE Transactions on Electron Devices

Volumn 47, Issue 7, 2000, Pages 1426-1430

  Kumar, Anil ^b   Kalra, Ekta ^b   Haldar, Subhasis ^c   Gupta, R S ^a,b  

^a IEEE   (India)

^b UNIVERSITY OF DELHI   (India)

^c UNIVERSITY OF DELHI   (India)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHTLY DOPED DRAIN MOSFET; VOLTAGE DROP;

CARRIER CONCENTRATION; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; ELECTRODES; MATHEMATICAL MODELS; RELIABILITY; SPURIOUS SIGNAL NOISE; SUBSTRATES; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 0034227939     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.848287     Document Type: Article

References (12)

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