Surface characterization of inductively coupled plasma etched SiC in SF6/O2

Microelectronic Engineering

Volumn 67-68, Issue , 2003, Pages 369-375

  Jiang, Liudi ^a   Plank, N O V ^a   Cheung, R ^a   Brown, R ^a   Mount, A ^a  

^a UNIVERSITY OF EDINBURGH   (United Kingdom)

Author keywords

Dry etching; Inductively coupled plasma (ICP); Silicon carbide (SiC); X ray photoelectron spectroscopy (XPS)

Indexed keywords

CHEMICAL BONDS; DRY ETCHING; INDUCTIVELY COUPLED PLASMA; MIXTURES; OXYGEN; PLASMA ETCHING; SUBSTRATES; SURFACE CHEMISTRY; X RAY PHOTOELECTRON SPECTROSCOPY;

ETCH RATE;

SILICON CARBIDE;

EID: 0037683082     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00092-3     Document Type: Conference Paper

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