Synthesis of SiC on Si(1 1 1) at moderate temperatures by supersonic C 60 beams

Applied Surface Science

Volumn 184, Issue 1-4, 2001, Pages 350-355

  Aversa, L ^a   Verucchi, R ^a   Ciullo, G ^a   Ferrari, L ^b   Moras, P ^b   Pedio, M ^b   Pesci, A ^b   Iannotta, S ^a  

^a CNR   (Italy)

^b CNR   (Italy)

Author keywords

Film growth; Fullerene; Silicon carbide; Supersonic beams; Surface spectroscopies

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; FILM GROWTH; FULLERENES; KINETIC ENERGY; LOW ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING FILMS; SUBSTRATES; SYNTHESIS (CHEMICAL); ULTRAHIGH VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY;

SUPERSONIC BEAMS;

SILICON CARBIDE;

EID: 0035852204     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00516-5     Document Type: Article

References (23)