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Volumn 24, Issue 3, 2003, Pages 147-149

Diffusion barrier integrity and electrical performance of Cu/porous dielectric damascene lines

Author keywords

Diffusion barriers; Electric breakdown; Interconnects; Leakage current; Porous dielectrics

Indexed keywords

DIELECTRIC MATERIALS; DIFFUSION IN SOLIDS; ELECTRIC BREAKDOWN; LEAKAGE CURRENTS; POROUS MATERIALS; THERMAL STRESS;

EID: 0037600582     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.809535     Document Type: Letter
Times cited : (26)

References (15)
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    • J.-N. Sun, D. W. Gidley, T. L. Dull, W. E. Frieze, A. F. Yee, E. T. Ryan, S. Lin, and J. Wetzel, "Probing diffusion barrier integrity on porous silica low-k thin films using positron annihilation lifetime spectroscopy," J. Appl. Phys., vol. 89, pp. 5138-5144, 2001.
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    • Factors affecting an efficient sealing of porous low-k dielectrics by physical vapor deposition Ta(N) films
    • F. Iacopi, Zs. Tökei, Q. T. Le, D. Shamiryan, T. Conard, B. Brijs, U. Kreissig, M. Van Hove, and K. Maex, "Factors affecting an efficient sealing of porous low-k dielectrics by physical vapor deposition Ta(N) films," J. Appl. Phys., vol. 92, no. 3, pp. 1548-1554, 2002.
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    • Iacopi, F.1    Tökei, Zs.2    Le, Q.T.3    Shamiryan, D.4    Conard, T.5    Brijs, B.6    Kreissig, U.7    Van Hove, M.8    Maex, K.9
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    • Properties of porous HSQ-based films capped by plasma enhanced chemical vapor deposition dielectric layers
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.