Overcoming barrier integrity issues of I-PVD Ta(N) layers on inorganic porous low-k's

Advanced Metallization Conference (AMC)

Volumn , Issue , 2001, Pages 61-66

  Iacopi, Francesca ^a   Tokei Zs ^a   Shamiryan, D ^a   Le, Q T ^a   Malhouitre, S ^a   Van Hove, M ^a   Maex, K ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DIELECTRIC FILMS; PHYSICAL VAPOR DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PORE SIZE; TANTALUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

DAMASCENCE STRUCTURES;

POROUS MATERIALS;

EID: 0035554803     PISSN: 10480854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. Properties of porous HSQ-based films capped by PECVD dielectric layers
2. Evaluation of Ta(N) diffusion barrier integrity on porous low-k films