Carrier concentration dependence of electronic and magnetic properties of Sn-doped GaMnAs

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 10, Issue 1-3, 2001, Pages 196-200

  Satoh, Yoshihiro ^a   Okazawa, Daisuke ^a   Nagashima, Ayato ^a   Yoshino, Junji ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Diluted magnetic semiconductors; Ferromagnetism; GaMnAs

Indexed keywords

CARRIER CONCENTRATION; ELECTRONIC PROPERTIES; FERROMAGNETISM; MAGNETIC PROPERTIES; MAGNETIZATION; MAGNETOMETERS; MAGNETORESISTANCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SQUIDS; TIN; TRANSPORT PROPERTIES;

DILUTED MAGNETIC SEMICONDUCTORS; GALLIUM MANGANESE ARSENIDE; MAGNETOTRANSPORT PROPERTIES;

MAGNETIC SEMICONDUCTORS;

EID: 0035336158     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(01)00081-9     Document Type: Article

References (6)