Fully-depleted 0.25 μm SOI devices for low power RF mixed analog-digital circuits

IEEE International SOI Conference

Volumn , Issue , 1998, Pages 67-68

  Raynaud, C ^a   Faynot, O ^a   Pelloie, J L ^a   Deleonibus, S ^a   Vanhoenacker, D ^a   Gillon, R ^a   Sevenhans, J ^a   Compagne, E ^a   Fletcher, G ^a   Mackowiak, E ^a  

^a CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; ELECTRIC RESISTANCE; ION IMPLANTATION; MOSFET DEVICES; PHOTOLITHOGRAPHY; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SILICON WAFERS; THRESHOLD VOLTAGE; ULTRATHIN FILMS;

FULLY DEPLETED DEVICES;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0032311659     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)