Asymmetric channel SOI nMOSFET for reducing parasitic effects and improving output characteristics

Electrochemical and Solid-State Letters

Volumn 3, Issue 1, 2000, Pages 50-52

  Pavanello, M A ^a   Martino, J A ^a   Dessard, V ^b   Flandre, D ^b  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CONDUCTANCE; ELECTRIC CURRENTS; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; TRANSCONDUCTANCE;

ASYMMETRIC CHANNEL DOPING; GRADED CHANNEL SILICON-ON-INSULATOR MOSFETS; PARASITIC EFFECTS;

MOSFET DEVICES;

EID: 0033639792     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1390955     Document Type: Article

References (7)

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