Accurate characterization of Silicon-on-Insulator MOSFETs for the design of low-voltage, low-power RF integrated circuits

Analog Integrated Circuits and Signal Processing

Volumn 25, Issue 2, 2000, Pages 133-155

  Raskin, J P ^a   Gilon, R ^b   Dambrine, G ^c   Chen, J ^d   Vanhoenacker, D ^e   Colinge, J P ^f  

^a UNIVERSITY OF MICHIGAN   (United States)

^b LUCENT TECHNOLOGIES   (United States)

^c INSTITUT D ELECTRONIQUE   (France)

^d MOTOROLA INC   (United States)

^e UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^f University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MICROWAVE MEASUREMENT; MOSFET DEVICES; SCATTERING PARAMETERS; SILICON ON INSULATOR TECHNOLOGY; SPURIOUS SIGNAL NOISE;

RADIO FREQUENCY INTEGRATED CIRCUITS;

MICROWAVE INTEGRATED CIRCUITS;

EID: 0034325417     PISSN: 09251030     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1008380615900     Document Type: Article

References (53)

1. R. A. Johnson, C. E. Chang, P. R. de la Houssaye, M. E. Wood, G. A. Garcia, P. M. Asbeck, and I. Lagnado, "A 2.4 GHz silicon-on-sapphire CMOS low noise amplifier." IEEE Microwave and Guided Waves Letters, pp. 350-352, 1997.
2. A. K. Agarwal, M. C. Driver, M. H. Hanes, H. M. Hobgood, P. G. McMullin, H. C. Nathanson, T. W. O'Keeffe, T. J. Smith, J. R. Szedon, and R. N. Thomas, "MICROX - An advanced silicon technology for microwave circuits up to X-band." in: IEEE IEDM Technical Digest, pp. 26.7.1-26.7.4, 1991.
3. M. E. Alperin, T. C. Hollaway, R. A. Haken, C. D. Gosmeyer, R. V. Karnaugh, and W. D. Parmantie, "Development of the self-aligned titanium silicide process for VLSI applications." Electron Devices 32(2), pp. 141-149, 1985.
4. A. Auberton-Hervé, ' - ' In: D. N. Schmidt (ed.): Proceedings of the Fourth International Symposium on Silicon-On-Insulator Technology and Devices 90(6), p. 455, 1990.
5. M. Berroth and R. Boschi, "Broad-band determination of the FET small-signal equivalent circuit." IEEE Trans. Microwave Theory Techniques 38(7), pp. 891-895, 1990.
6. A. Cappy, "Noise modeling and measurements techniques." IEEE Trans. Microwave Theory Techn. 36(1), pp. 1-10, 1988.
7. A. L. Caviglia, R. C. Potter, and L. J. West, "Microwave performance of SOI n-MOSFETs and coplanar waveguides." IEEE Electron Device Letters 12(1), pp. 26-27, 1991.
8. J. Chen, J.-P. Colinge, D. Flandre, R. Gillon, J.-P. Raskin, and D. Vanhoenacker, "Investigation of SALICIDE processes for thin-film SOI microwave applications," in S. Cristoloveanu (ed.), Proceedings of the 8th Int. Symp. on SOI Technology and Devices, Electrochemical Society Proceedings Vol. 97-23. Paris, pp. 98-103, 1997a.
9. 2, and Nisi for thin-film silicon-on-insulator applications." J. Electrochem Soc. 144(7), pp. 2437-2442, 1997b.
10. H. Cho and D. Burk, "A three-step method for the de-embedding of high-frequency S-parameters measurements." IEEE Trans. Electron Devices 38(6), 1371-1375, 1991.
11. J. Colinge, J. Chen, D. Flandre, J. Raskin, R. Gillon, and D. Vanhoenacker; "A low-voltage, low-power microwave SOI MOSFET," in Proc. IEEE Int. SOI Conf., pp. 128-129, 1996.
12. G. Dambrine, "On the validity of a new extrinsic equivalent circuit including noise of HEMT's required for millimeter wave circuit design." Ann. Telecom. 52(3-4), pp. 140-144, 1997.
13. G. Dambrine, A. Cappy, F. Heliodore, and E. Playez, "A new method for determining the FET small-signal equivalent circuit." IEEE Trans. Microwave Theory Techn. 36(7), pp. 1151-1159, 1988.
14. G. Dambrine, H. Happy, F. Danneville, and A. Cappy: "A new method for on wafer noise measurement." IEEE Trans. on Microwave Theory and Techn. 41(3), pp. 375-381, 1993.
15. F. Danneville, H. Happy, G. Dambrine, J. M. Belquin, and A. Cappy, "Microscopic noise modeling and macroscopic noise models: How good a connection?" IEEE Trans. Electron Devices 41(5), pp. 779-786, 1994.
16. P. R. de la Houssaye, C. E. Chang, B. Offord, G. Imthurn, R. Johnson, P. M. Asbeck, G. A. Garcia, and I. Lagnado, "Microwave performance of optically fabricated T-Gate thin film silicon-on-sapphire based MOSPET's." IEEE Electron Device Letters 16(6), pp. 289-292, 1993.
17. J. P. Eggermont, D. Flandre, J. P. Raskin, and J. P. Colinge, "Potential and modeling of 1m 1 GHz SOI CMOS OTAs." Electronics Letters 33(9), pp. 774-775, 1997.
18. C. C. Enz, F. Krummenacher, and E. A. Vittoz, "An analytical MOS transistor model valid in all re-isof operation and dedicated a low-voltage and low-current applications." Analog Integrated Circuits and Devices Magazine 8, pp. 83-114, 1995.
19. A. Fraser, R. Gleason, and E. W. Strid, "GHz on-silicon-wafer probing calibration methods," in IEEE 1988 Bipolar Circuits and Technology Meeting, 1988.
20. R. Gillon, J.-P Raskin, D. Vanhoenadur, and J.-P. Colinge, "Modelling and optimizing the SOI MOSFET in view of MMIC applications," in 25th European Micromave Conference Digest Bologna, Italy, pp. 543-547, 1995.
21. M. Harada, et al., "1-V Multigipherts MOSFET amplifier with on-chip inductor fabricated on a SIMOX wafer," in International Conf. Solid State Devices and Materials pp. 485-486, 1996.
22. H. Heuermann and B. Schiek, "Procedures for the Determination of the Scattering Parameters for Network Analyzer Calibration." IEEE Trans. on Instrumentation and Measurement 42(2), pp. 528-531, 1993.
23. H. Heuermann and B. Schiek: "Robust Algorithms for Txx Network Analyzer Self-Calibration Procedures." IEEE Trans. on Instrumentation and Measurement 43(1), pp. 18-22, 1994.
24. T. Ikeda, et al: "A high performance BiCMOS with novel self-aligned vertical PNP, transistors," in Proc. IEEE Bipolar/BiCMOS Circuits and Technologg Meeting, pp. 238-241, 1994.
25. C.-H. Kim, C. S. Kim, H. K. Yu, and K. S. Nam: "An isolated-open pattern to de-embed pad parasitics." IEEE Microwave and Guided Waves Letters 8(2), 96-98, 1998.
26. J. Lasky, J. Nakos, O. Cain, and P. Geiss: "Comparison of transformation to low-resistivity phase and agglomeration of TiSi2 and CoSi2." IEEE Trans. on Electron Devices 88(2), p. 262, 1991.
27. C. K. Lau, Y. C. See, D. B. Scott, J. M. Bridges, S. M. Perna, and R. D. Davis, "Titanium disilicide self-aligned sourol-dram + gate technology," in IEDM Tech. Digest, pp. 714-717, 1982.
28. S. Lee, et al. "Effects of Pad and Interconnection Parasitics on Forward Transit Time in HBTs." IEEE Trans. on Electron Devices 46(2), pp. 275-280, 1999.
29. S. Lee, Hyun Kyu Yu, Cheon Soo Kim, Jin Gun Koo, and Kee Soo Nam, "A novel approach to extracting small-signal model parameters of silicon MOSFETs." IEEE Microwave and Guided Waves Letters 7(3), pp. 75-77, 1997.
30. J. Ma, et al. "Silicon RF-GCMOSIC technology for RF mixed-mode wireless applications," in Digest of Radio Frequency Integrated Circuits (RFIC) Symposium. pp. 175-179, 1997.
31. K. Maex, K. Semiconductor International 75, 1995.
32. R. B. Marks and D. F. Williams, "A general waveguide circuit theory." J. Res. Natl Inst. Stand. Technol. 97(5), pp. 533-562, 1992.
33. T. Morimoto, T. Ohguro, H. S. Momose, T. Iinuma, I. Kunishima, K. Suguro, I. Katakabe, M. Tsuchiaki, M. Ono, Y. Katsumata and H. Iwai, "Self-aligned Nickel-mono-silicide technology for high-speed deep submicrometer." IEEE Trans. Electron Devices 42(4), pp. 915-922, 1995.
34. T. Ohguro, S. Nakamura, M. Koike, T. Morimoto, A. Nishiyama, Y. Ushiku, T. Yoshitomi, M. Ono, M. Saito, and K. Iwai, "Analysis of resistance behavior in Ti- and Ni-SALICIDED polysilicon films." IEEE Trans Electron Devices 41(12), pp. 2305-2317, 1994.
35. M. W. Pospieszalski, "Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence." IEEE Trans. Microwave Theory Techniques 87(9), pp. 1340-1350, 1989.
36. R. A. Pucel and H. A. Haus, "Signal and noise properties of gallium arsenride microwave field effect transistors," in Advances in electron and electron physics, Vol. 38. New York, Academic Press, pp. 195-265, 1975.
37. J.-P. Raskin, R. Gillon, J. Chen, D. Vanhoenacker, and J.-P. Colinge, "Accurate SOI MOSFET characterization at microwave frequencies for device performace optimisation and analogue modelling." IEEE Trans. Electron Devices 45(5), pp. 1017-1025, 1998.
38. J.-P. Raskin, R. Gillon, and G. Dambrine, "Direct extraction of the series equivalent circuit parameters for the small-signal model of SOI MOSFETs." IEEE Microwave and Guided Waves Letters 7(12), pp. 408-410, 1997.
39. A. Rofougaran et al., "A 1 GHz CMOS RF front-end IC for a direct-conversion wireless receiver." IEEE J. Solid-State circuits 31(7), pp. 880-889, 1996.
40. H. Rothe and W. Dahlke, "Theory of noisy fourpoles." in Proc. of the IRE, pp. 811-418, 1956.
41. R. Sarpeshkar, et al. "White noise in MOS transistors and resistors." IEEE Circuits and Devices Magazine 9, pp. 23-29, 1994.
42. J. Scofield, N. Borland, and D. M. Fleetwood, "Reconciliation of different gate-voltage dependencies of 1/f noise in n-MOS and p-MOS transistors." IEEE Trans. on Electron Devices 41(11), pp. 1946-1952, 1994.
43. D. Shaeffer and T. Lee, "A 1.5-V, 1.5-GHz CMOS low noise amplifier." IEEE J. of Solid-State Circuits 32(5), pp. 745-759, 1997.
44. E. Simoen, U. Magnusson, C. Claeys, and J. P. Colinge, "The low-frequency noise behavior of gate-all-around SOI transistors," in 1992 IEEE International SOI Conference Proceedings, pp. 116-117, 1992.
45. J. Sturm, K. Tokunaga, and J. Colinge, "Increased drain saturation current in ultra-thin silicon-on-insulator (SOI) MOS transistors." IEEE Electron Device Letters 9, pp. 450-462, 1988.
46. N. Suermatsu, "On chip matching Si-MMIC for mobile communication terminal application," in Proc. IEEE MTT-S Radio Frequency Integrated Circuits Symposium (RFIC), pp. 9-12, 1997.
47. S. Tedja, J. Van der Spiegel, and H. H. Williams, "Analytical and experimental stndies of thermal noise in MOSFET." IEEE Trans. Electron Devices 41(11), pp. 2069-2075, 1994.
48. Y. Tsividis, Operation and Modeling of the MOS Transistor. McGraw-Hill Book Company, 1987.
49. A. Van der Ziel, "Gate noise in field effect transistors at moderately high frequencies." Proc. of the IRE 51(3), pp. 461-467, 1963.
50. P. J. van Wijnen, H. R. Claessen, and E. A. Wolsheimer, "A new straight-forward calibration and correction procedure for on-wafer high frequency S-parameters meaerements (45 MHz-18 GHz)," in IEEE 1987 Bipolar Circuits and Technology Meeting, 1987.
51. L. Vandanime, X. Li, and D. Rigaud, "1/f noise in MOS devices, mobility or number flutuations?" IEEE Trans. Electron Devices 41(11), pp. 196-1945, 1994.
52. S. P. Voinigescu, et al., "An assessment of the state-of-the-art 0.5 μm bulk CMOS technology for RF applications," in Techn. Dig. IEDM, pp. 721-724, 1995.
53. D. F. Williams, R. B. Marks, and A. Davidoon, "Comparison of on-wafer calibrations," in 38th ARFTG Conference Digest, pp. 68-81, 1991.