Electronic properties of PLD prepared nitrogenated a-SiC thin films

Thin Solid Films

Volumn 433, Issue 1-2 SPEC., 2003, Pages 34-38

  Barreca, Francesco ^a   Fazio, Enza ^b   Neri, Fortunato ^b   Trusso, Sebastiano ^c  

^a INFM Sezione di Messina   (Italy)

^b UNIVERSITY OF MESSINA   (Italy)

^c CNR   (Italy)

Author keywords

A SiCN; Electronic properties; Laser ablation

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS FILMS; CHEMICAL BONDS; ELECTRIC CONDUCTIVITY; ELECTRONIC PROPERTIES; ENERGY GAP; NITROGEN; PULSED LASER DEPOSITION; SILICON CARBIDE; STOICHIOMETRY; TRANSPORT PROPERTIES; X RAY PHOTOELECTRON SPECTROSCOPY;

STRUCTURAL PROPERTIES;

THIN FILMS;

EID: 0037505550     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00315-8     Document Type: Conference Paper

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